Sn-Containing Group-IV Semiconductors for Energy Applications in Photovoltaics and Thermoelectricity

用于光伏和热电能源应用的含锡 IV 族半导体

基本信息

  • 批准号:
    0907600
  • 负责人:
  • 金额:
    $ 88.44万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2009
  • 资助国家:
    美国
  • 起止时间:
    2009-09-01 至 2013-08-31
  • 项目状态:
    已结题

项目摘要

0907600Menendez "This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5)." Technical. This Focused Research Group (FRG) project explores energy applications of group-IV (Si, Ge) semiconductor materials incorporating Sn. The combination of Sn with Si and Ge may allow desirable structural and electronic properties with advantageous opportunities in photovoltaics and thermoelectricity. Fundamental studies of the Si-Ge-Sn system are planned for the specific purposes: a) designing multijunction solar cells with fully optimized band gaps; b) exploring the potential of the Si-Ge-Sn system for intermediate band photovoltaics; c) designing materials with dramatically enhanced impact ionization rates; d) fabricating structures with ultra-low thermal conductivities; and e) engineering enhanced Seebeck coefficients. The size of the compositional space being explored, combined with possible nanostructural arrangements for a given composition, benefit from a multidisciplinary FRG approach. Theoretical simulations will be used to identify the most promising structures which will be synthesized using CVD methods introducing new precursors and modifications as required. Electrical and contactless optical characterization methods will be employed. Non-Technical. The project addresses fundamental research issues in a topical area of electronic/photonic materials science having energy related technological relevance. Additionally, the project will include several education/outreach efforts: hosting a regional workshop "Semiconductors and Society" for high school pre-seniors to (i) research student perceptions of how science and engineering innovations impact high-tech products relying on semiconductors (ii) elucidate how intellectual innovations can impact future manufacturing technologies to preserve the semiconductor sector as the major high-technology industry in Arizona and (iii) increase student interest in science and engineering and encourage the pursuit of advanced education in related technical fields. Also, new courses in materials and solid-state chemistry will be developed at ASU with integrated simulation and experimental components. These will be included in the undergraduate curriculum of a newly established "Science Master's in Nanoscience" program. Teaching modules and workshop materials will also be developed and disseminated through the project's web page.
0907600 Menendez“该奖项是根据2009年美国复苏和再投资法案(公法111-5)资助的。“技术性的。该重点研究小组(FRG)项目探索了含有锡的IV族(Si、Ge)半导体材料的能源应用。Sn与Si和Ge的组合可以允许期望的结构和电子性质,在光致发光和热电方面具有有利的机会。计划对硅-锗-锡系统进行基础研究,以达到以下具体目的:a)设计具有完全优化的带隙的多结太阳能电池; B)探索硅-锗-锡系统用于中带光电子学的潜力; c)设计具有显著增强的碰撞电离率的材料; d)制造具有超低热导率的结构;以及e)设计增强的塞贝克系数。正在探索的组成空间的大小,结合可能的纳米结构的安排,为一个给定的组合物,受益于多学科FRG的方法。理论模拟将用于确定最有前途的结构,这些结构将使用CVD方法合成,并根据需要引入新的前体和修饰。将采用电气和非接触式光学表征方法。非技术性。该项目解决了电子/光子材料科学领域的基础研究问题,具有与能源相关的技术相关性。此外,该项目将包括若干教育/外联工作:为高中预科生举办“半导体与社会”区域研讨会,以(i)研究学生对科学和工程创新如何影响依赖半导体的高科技产品的看法(ii)阐明智力创新如何影响未来的制造技术,以保持半导体部门作为亚利桑那州主要高科技产业的地位,以及(iii)提高学生对科学和工程的兴趣,并鼓励他们在相关技术领域接受高等教育。此外,材料和固态化学的新课程将在ASU开发,具有集成的模拟和实验组件。这些将被纳入新成立的“纳米科学科学硕士”计划的本科课程。还将编制教学单元和讲习班材料,并通过该项目的网页传播。

项目成果

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Jose Menendez其他文献

Jose Menendez的其他文献

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{{ truncateString('Jose Menendez', 18)}}的其他基金

FuSe-TG: Monolithic Heterointegration of GeSn and SiGeSn Alloys with Silicon Platforms
FuSe-TG:GeSn 和 SiGeSn 合金与硅平台的单片异质集成
  • 批准号:
    2235447
  • 财政年份:
    2023
  • 资助金额:
    $ 88.44万
  • 项目类别:
    Standard Grant
Collaborative Research: DMREF: Quasi-Direct Semiconductors
合作研究:DMREF:准直接半导体
  • 批准号:
    2119583
  • 财政年份:
    2021
  • 资助金额:
    $ 88.44万
  • 项目类别:
    Standard Grant
SusChEM: Molecular Routes to New Classes of Polar and Non-Polar Alloy Semiconductors
SusChEM:新型极性和非极性合金半导体的分子路线
  • 批准号:
    1309090
  • 财政年份:
    2013
  • 资助金额:
    $ 88.44万
  • 项目类别:
    Standard Grant
NSF-Europe: Electronic Correlations in Carbon Nanotubes
NSF-Europe:碳纳米管的电子相关性
  • 批准号:
    0244290
  • 财政年份:
    2003
  • 资助金额:
    $ 88.44万
  • 项目类别:
    Continuing Grant
Development of a Solid Immersion Lens Microscope for Optical Spectroscopy
用于光谱学的固体浸没透镜显微镜的开发
  • 批准号:
    0216601
  • 财政年份:
    2002
  • 资助金额:
    $ 88.44万
  • 项目类别:
    Standard Grant
U.S.- Spain Cooperative Research: Optical Studies of Carbon Nanotubes under High Magnetic Fields
美国-西班牙合作研究:高磁场下碳纳米管的光学研究
  • 批准号:
    0072110
  • 财政年份:
    2000
  • 资助金额:
    $ 88.44万
  • 项目类别:
    Standard Grant
Experimental and Theoretical Investigations of Light Scattering in Fullerenes
富勒烯光散射的实验和理论研究
  • 批准号:
    9624102
  • 财政年份:
    1996
  • 资助金额:
    $ 88.44万
  • 项目类别:
    Continuing Grant
Light Scattering Studies of Semiconductor Heterostructure Interfaces
半导体异质结构界面的光散射研究
  • 批准号:
    9521507
  • 财政年份:
    1995
  • 资助金额:
    $ 88.44万
  • 项目类别:
    Continuing Grant
Acquisition of Double Monochromator for Ultra-High Resolution Raman Spectroscopy
获取用于超高分辨率拉曼光谱的双单色仪
  • 批准号:
    9503904
  • 财政年份:
    1995
  • 资助金额:
    $ 88.44万
  • 项目类别:
    Standard Grant
Light Scattering Studies of Semiconductor Heterostructure Interfaces and Carbon-Based Materials
半导体异质结构界面和碳基材料的光散射研究
  • 批准号:
    9121567
  • 财政年份:
    1992
  • 资助金额:
    $ 88.44万
  • 项目类别:
    Continuing Grant

相似国自然基金

NSF蛋白亚硝基化修饰所介导的GluA2 containing-AMPA受体膜稳定性在卒中后抑郁中的作用及机制研究
  • 批准号:
    82071300
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