Electronic Properties of Spatially Confined Electron Layers on Indium-Arsenide

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The proposed work intends to explore a recently discovered phenomenon called motional binding in confined, quasi two- dimensional electron systems and also to study two-dimensional impurity bands in the metallic limit. The studies will be performed on InAs accumulation and inversion layers. Motional binding plays a role in the self-consistent screening potential and has been observed in Shubnikov-de Haas studies. The motional binding effect is not only important in accumulation layers for narrow-gap semiconductors, but may also be important for use in quantum-well devices. Impurity band studies in two-dimensional InAs allows the metallic limit to be approached more closely, where magnetic freezeout is readily achieved.