Electronic Properties of Spatially Confined Electron Layers on Indium-Arsenide

砷化铟空间受限电子层的电子特性

• 批准号: 8912686
• 负责人: Ryan Doezema
• 金额: $ 6.5万
• 依托单位: University of Oklahoma Norman Campus
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-01-15 至 1992-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8912686&HistoricalAwards=false
• 关键词: Electronic; Properties; Spatially; Confined; Electron

The proposed work intends to explore a recently discovered phenomenon called motional binding in confined, quasi two- dimensional electron systems and also to study two-dimensional impurity bands in the metallic limit. The studies will be performed on InAs accumulation and inversion layers. Motional binding plays a role in the self-consistent screening potential and has been observed in Shubnikov-de Haas studies. The motional binding effect is not only important in accumulation layers for narrow-gap semiconductors, but may also be important for use in quantum-well devices. Impurity band studies in two-dimensional InAs allows the metallic limit to be approached more closely, where magnetic freezeout is readily achieved.

拟议的工作旨在探索最近发现的现象，称为在受限的准二维电子系统中，并研究金属极限的二维杂质带。 研究将对INAS的积累和反转层进行。 运动结合在自洽的筛选潜力中起作用，并且在Shubnikov-de Haas研究中已经观察到。 运动结合效应不仅在狭窄差距半导体的累积层中很重要，而且对于在量子孔设备中使用也可能很重要。 二维INA中的杂质带研究可以更接近地接近金属极限，并可以在很容易实现磁性冻结的情况下进行。