Initial Stages of Interface Formation

硅衬底上砷覆盖层和硅膜与高tc氧化物衬底界面稳定性的实验研究。在砷硅功中，低能电子衍射将用于确定温度和砷覆盖引起的结构变化。在砷硅界面中加入镓的效果也将进行探索性研究。在高tc氧化硅的工作中，电子能谱将用于确定超导体和硅之间化学反应的热依赖性。

Experimental investigations on the stability of the interface between an arsenic overlayer on a silicon substrate, and between silicon films and high-Tc oxide substrates. In the arsenic- silicon work, low-energy electron diffraction will be employed to determine structural changes caused by varying temperature and arsenic coverage. Exploratory studies on the effect of adding gallium to the arsenic-silicon interfaces will also be carried out. In the high-Tc oxide-silicon work, electron spectroscopies will be used to determine the thermal dependence of chemical reactions between the superconductors and silicon.