Initial Stages of Interface Formation

界面稳定性的实验研究 在硅衬底上的砷覆盖层之间，以及 硅薄膜和高Tc氧化物衬底。 在砒霜里- 硅工作，低能电子衍射将被用来 确定由温度变化引起的结构变化， 砷覆盖率 关于添加的影响的探索性研究 镓的砷-硅界面也将进行 出去 在高Tc氧化硅工作中， 将用于确定化学物质的热依赖性， 超导体与硅之间的反应。

Experimental investigations on the stability of the interface between an arsenic overlayer on a silicon substrate, and between silicon films and high-Tc oxide substrates. In the arsenic- silicon work, low-energy electron diffraction will be employed to determine structural changes caused by varying temperature and arsenic coverage. Exploratory studies on the effect of adding gallium to the arsenic-silicon interfaces will also be carried out. In the high-Tc oxide-silicon work, electron spectroscopies will be used to determine the thermal dependence of chemical reactions between the superconductors and silicon.