Surface Electromigration on Metals

金属表面电迁移

• 批准号: 9225080
• 负责人: Ellen Williams
• 金额: $ 10万
• 依托单位: University of Maryland, College Park
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-07-15 至 1995-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9225080&HistoricalAwards=false
• 关键词: Surface; Electromigration; Metals

9225080 Williams This project will apply a range of modern surface science techniques to investigate the effects of applied electrical currents on the surface migration of atoms on metal surfaces. The phenomenon is known as surface electromigration (EM). Interestingly, EM on surfaces is rather poorly understood, though it is considered to potentially be of substantial technological interest. In the past it has been studied, but not in depth, with modern surface structure tools. Surface mass transport will be investigated experimentally by studying the changes of step structure under an applied electrical current using low-energy electron microscopy. %%% This project will investigate how surface atoms move or do not move under the influence of an applied electric field. The changes in surface morphology will be followed with a new surface microscope that allows real-time data collection of surface structure images. This is a low-energy electron microscope. The phenomenon of surface electromigration is surprisingly poorly understood. It has been studied for many years, but not with the modern techniques of this project. The objective is to obtain definitive data about surface electromigration, which is acknowledged to be potentially of great technological significance, particularly in the microelectronics industry. ***

9225080威廉姆斯该项目将应用一系列现代表面科学技术，以调查施加电流对金属表面原子迁移的影响。 这种现象被称为表面电迁移（EM）。 有趣的是，表面上的EM被理解得相当少，尽管它被认为是潜在的重大技术兴趣。 在过去，它已经研究过，但没有深入，与现代表面结构工具。 表面质量传输将通过使用低能电子显微镜研究施加电流下台阶结构的变化进行实验研究。 本项目将研究表面原子在外加电场的影响下如何移动或不移动。 在表面形态的变化将遵循一个新的表面显微镜，允许实时数据收集的表面结构图像。 这是一个低能电子显微镜。 令人惊讶的是，人们对表面电迁移现象的了解甚少。 它已经被研究了很多年，但不是用这个项目的现代技术。 其目的是获得有关表面电迁移的确切数据，这被认为是潜在的重大技术意义，特别是在微电子工业。 ***