In Situ Growth of Indium Arsenide Antimonide Long Wavelength Infrared Detectors

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The recent advances in bandgap engineering by molecular beam epitaxy (MBE) have produced a strained superlattice (SSL) of InSb/InAs Sb capable of being made into photodiode detectors suitable for the long wavelength infrared (LWIR, 8-14 micron) spectral range. This project will attempt to develop a suitable multilayered buffer for near-perfect lattice matching between Si and epitaxial processes and trial epitaxy will be investigated, in the Phase I effort.