In-situ Growth of Indium Arsenide/Antimonide Long Wavelength Photodiodes

砷化铟/锑化物长波长光电二极管的原位生长

• 批准号: 9023197
• 负责人: William Chan
• 金额: $ 25.22万
• 依托单位: Electro-Optek Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-03-01 至 1994-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9023197&HistoricalAwards=false
• 关键词: situ; Growth; Indium; Arsenide; Antimonide

The new technology of strained superlattice (SSL) of InAsSb and in- situ formation of photodiode on silicon (Si) has the potential of fabricating producible long-wavelength infrared (L-WIR) photodiodes for diverse and military applications. An investigation on the molecular beam epitaxial (MBE) growth of the SSL on Si has been made in a phase I SBIR program, aimed at fabricating producible LWIR arrays. This was accomplished in phase I: (1) all required MBE modifications compatible to the MBE system have been designed and some have been reduced to practice; (2) the MBE processes for growing a lattice-matching buffer, SSL and photojunction have been delineated; (3) the feasibility of growing high quality buffer and InAsSb epitaxial layers on Si has been demonstrated by numerous MBE growth runs; and (4) a detailed plan for phase II has been established. The MBE growth runs performed have consistently produced good epitaxial growth, manifested by well-ordered reflective high energy electron diffraction (RHEED) patterns, high growth stability, mirror-like surface morphology and high carrier mobility. These runs have reduced the high risk elements and increase the probability of success of phase II. The first goal in phase II is to optimize the growth of the buffer and InAsSb SSL to establish a cutoff wavelength of 12 microns. Second goal is to develop the photodiode detector using MBE. A special buffer on Si for lattice matching an defect blocking will be developed then the growth of SSL on the buffer, followed by the in-situ growth of the photodiodes will be established. The low- defect SSL will provide high detector performance, producibility and uniformity, while the sequential multilayer growth will produce a straightforward in-situ photodiode formation process.

InAsSb应变超晶格和硅(Si)上原位形成光电二极管的新技术有可能制作可生产的长波长红外光电二极管，用于各种军事应用。为了制备可生产的长波红外阵列，在第一阶段的SBIR程序中，研究了在硅上生长SSl的分子束外延(MBE)。这是在第一阶段完成的：(1)与MBE系统兼容的所有所需的MBE修改已经设计好，其中一些已经付诸实践；(2)已经描述了生长晶格匹配缓冲层、SSL和光结的MBE工艺；(3)通过多次MBE生长，证明了在Si上生长高质量缓冲层和InAsSb外延层的可行性；(4)制定了二期工程的详细规划。分子束外延生长连续获得良好的外延生长，表现为有序的反射高能电子衍射(RHEED)图、高的生长稳定性、镜面状的表面形貌和高的载流子迁移率。这些运行减少了高风险因素，增加了第二阶段的成功概率。第二阶段的第一个目标是优化缓冲器和InAsSb SSL的增长，以建立12微米的截止波长。第二个目标是开发使用分子束外延的光电二极管探测器。我们将在硅上开发一种特殊的缓冲器，用于匹配缺陷阻塞，然后在缓冲器上生长SSl，然后原位生长光电二极管。低缺陷的SSL将提供高的探测器性能、可生产性和一致性，而顺序的多层生长将产生直接的原位光电二极管形成过程。