Molecular Chemistry of the Superconductor-Substrate Interface

高温超导体（HTSC）在 电子器件需要成本有效的沉积工艺 在下面生长外延，原位超导薄膜， 650oC。 金属有机化学气相沉积（MOCVD）具有 满足这一需求的潜力;然而，目前受到以下因素的限制 分解中间体所需的高温 由II族源试剂分解形成。 的 研究将提供一个基本的了解钡 在生长界面处发生的化学反应， 高温超导薄膜的低温制备。 如果低 生长温度可以实现，发展的一个 制造工艺应迅速遵循基于CVD的 在大面积均匀性和易于缩放方面的固有优势- 起来

The application of high temperature superconductors (HTSC) in electronics requires a cost-effective deposition process capable of growing epitaxial, in-situ superconducting thin films below 650oC. Metalorganic Chemical Vapor Deposition (MOCVD) has the potential to meet this need; however, it is currently limited by the high temperatures required to decompose the intermediates formed by the decomposition of Group II source reagents. The research will provide a fundamental understanding of the barium chemistry occurring at the growth interface which will facilitate the low temperature preparation of HTSC thin films. If low growth temperatures can be realized, the development of a manufacturing process should rapidly follow based on CVD's inherent advantages in large area uniformity and ease of scale- up.