Plasma Enhanced Chemical Vapor Deposition of BaTiO3

钙钛矿（如BaTiO3）作为薄膜铁电材料在微电子学和光电子学中的应用受到材料加工和兼容性问题的限制。高质量的铁电薄膜还没有在与Si或GaAs加工技术相容的温度下生长。考虑到这些材料卓越的电学和光学特性，以及它们在生产低成本dram和非易失性存储设备方面的潜力，开发能够在低温下生产高质量铁电薄膜的新薄膜沉积技术尤为重要。利用最近在ATM开发的高温超导体金属有机化学气相沉积（MOCVD）技术，提出了一种新的等离子体增强MOCVD工艺，用于在与硅加工相容的温度下沉积BaTiO3。第一阶段计划的具体目标是在低于650℃的温度下，通过等离子体增强MOCVD在Si（100）上沉积a轴取向的BaTi03薄膜。基于BaTiO3铁电电容器存储电池的原型随机存取存储器将在第二阶段制造和测试。寿命超过1012次写/读/反转访问，断电后存储器保留时间超过一年，这是对最先进的铁电存储器的重大改进。

The use of perovskites such as BaTiO3 as thin film ferroelectric materials in microelectronics and photonics has been limited by materials processing and compatibility problems. High quality ferroelectric thin films have not been grown at temperatures compatible with stand Si or GaAs processing technology. Considering the superb electrical and optical properties of these materials as well as their potential for use in the production of low cost DRAMs and non-volatile memory devices, the development of new thin film deposition techniques capable of producing high quality ferroelectric thin films at low temperatures is especially important. Utilizing techniques recently developed at ATM for the deposition of high temperature superconductors by metalorganic chemical vapor deposition (MOCVD), a novel plasma- enhanced MOCVD process for the deposition of BaTiO3 at temperatures compatible with silicon processing is proposed. The specific goal of the Phase I program is to deposit a-axis oriented BaTi03 thin films on Si(100) at temperatures below 650oC by plasma enhanced MOCVD. Prototype random access memory devices based on BaTiO3 ferroelectric capacitor storage cells will be fabricated and tested in Phase II. Lifetimes in excess of 1012 write/read/invert accesses and power-off memory retention over one year, which represent a significant improvement over state- of-the-art ferroelectric memory cells, are targeted.