Plasma Enhanced Chemical Vapor Deposition of Yttrium Barium Copper Oxide Superconducting Material

用该方法可重复地生长薄膜晶体 正确的化学计量和适当的形态是关键， 结合膜高的装置的商业化 高温超导体 金属氧化物化学气相 金属有机化学气相沉积（MOCVD）有可能满足这些需求， 相对容易地按比例放大到制造量。 然而，在这方面， 最近对MOCVD的研究受到两个主要限制的困扰： （l.）在低于800 ℃的温度下生长的薄膜是无定形的 氧化物、氟化物和/或碳酸钡的混合物，和（2.） 如此沉积的膜表现出菜花状形态， 表明低表面迁移率生长。 表面迁移率 可以在不升高温度的情况下增加， 通过使用等离子体对基底进行处理。 此外，等离子体辅助 激光烧蚀、溅射和反应蒸发已经 用于超导薄膜的原位生长， 温度低至400 ℃，即使BaF2已被用作 Ba的前身。 这些结果表明，等离子体增强 化学气相沉积（PECVD）可以影响原位生长 用现有的试剂 技术. 第一阶段研究的目标是 展示了PECVD原位超导薄膜的 YBaCuO的衬底温度低于600 ℃。

The reproducible crystal growth of thin films with the correct stoichiometry and appropriate morphology is the key to the commercialization of devices incorporating film high temperature superconductors. Metal oxide chemical vapor deposition (MOCVD) has the potential to meet these needs coupled with relative ease of scaling to manufacturing volumes. However, recent work on MOCVD has been plagued by two major limitations: (l.) films grown at temperatures less than 800C are amorphous mixtures of oxides, fluorides and/or barium carbonate and (2.) as-deposited films exhibit cauliflower-like morphology which is indicative of low surface mobility growth. Surface mobilities can be increased without elevating the temperature of the substrate through the use of a plasma. Moreover, plasma assisted laser ablation, sputtering and reactive evaporation have already been used for the in-situ growth of superconducting thin films at temperatures as low as 400C, even when BaF2 has been used as the Ba precursor. These results suggest that plasma enhanced chemical vapor deposition (PECVD) may effect the in-situ growth of superconducting thin films with the existing reagent technology. The goal of this first phase of research is to demonstrate the PECVD of in-situ superconducting thin films of YBaCuO at substrate temperatures below 600 C.