Novel Tungsten Metallo-Organic Chemical Vapor Deposition Source Reagents for VLSI Applications

超大规模集成电路和三维集成的持续发展 对金属化结构提出了越来越高的要求。 新 需要材料来推进这些关键技术。 的许多 化学气相法制备难熔金属薄膜的优点 包括保形台阶收敛的高密度化学气相沉积（CVD） 抗电迁移性和低电阻率使它们具有吸引力 用于栅极、互连、接触、扩散阻挡层和通孔插塞 金属化 然而，CVD钨的应用和 钼到超大规模集成电路的处理一直受到二次 由元素源的氟配体引起的反应 CVD过程中使用的试剂。 这些反应最终导致 设备的故障。 拟议研究的目标 是一套分子设计标准的阐述， 难熔金属源试剂和一种新的 革新超大规模集成电路的有机钨CVD源试剂 金属化 这些目标将通过应用多学科 方法，其中的结果从薄膜生长和基本 分解研究用于细化的分子结构 源试剂。 CVD的直接商业影响 难熔金属在超大规模集成电路工艺上的应用将是一种新的进展， 产生具有上级性能的金属化结构 以及相对于现有组件的稳定性。

The continued drive toward VLSI and three-dimensional integration places ever-increasing demands on metalization structures. New materials are needed to advance these vital technologies. The many advantages of refractory metal thin films prepared by chemical vapor deposition (CVD) including conformal step converage, high electromigration resistance and low resistivity make them attractive for gate, interconnect, contact, diffusion barrier and via plug metalizations. However, the application of CVD tungsten and molybdenum to VLSI processing has been impeded by the secondary reactions caused by the florine ligands of the elemental source reagents used in the CVD process. These reactions ultimately lead to the failure of the device. The objectives of the proposed research are the elaboration of a set of molecular design criteria for refractory metal source reagents and the identification of a novel organotungsten CVD source reagent which revolutionizes VLSI metalization. These goals will be met by applying a multidisciplinary approach in which results from film growth and fundamental decomposition studies are used to refine the molecular structure of the source reagents. The immediate commercial impact of CVD refractory metals on VLSI processing would be the advance to a new generation of metalization structures offering superior performance and stability relative to existing components.