Novel Tungsten Metallo-Organic Chemical Vapor Deposition Source Reagents for VLSI Applications

超大规模集成电路和三维集成的持续发展对金属化结构提出了越来越高的要求。需要新材料来推动这些关键技术的发展。化学气相沉积(CVD)制备的难熔金属薄膜具有阶梯共形转换、高电迁移电阻和低电阻率等优点，在栅极、互连、接触、扩散势垒和通孔塞金属化等方面具有广泛的应用前景。然而，由于CVD工艺中使用的元素源试剂中的弗罗林配体引起的二次反应，阻碍了CVD钨和钼在VLSI工艺中的应用。这些反应最终导致了设备的失败。这项研究的目标是制定一套难熔金属源试剂的分子设计标准，并确定一种新的有机钨CVD源试剂，它将彻底改变VLSI的金属化。这些目标将通过应用多学科方法来实现，在这种方法中，薄膜生长和基本分解研究的结果被用来精炼来源试剂的分子结构。CVD难熔金属对超大规模集成电路工艺的直接商业影响将是向新一代金属化结构的发展，与现有组件相比，这种结构具有更好的性能和稳定性。

The continued drive toward VLSI and three-dimensional integration places ever-increasing demands on metalization structures. New materials are needed to advance these vital technologies. The many advantages of refractory metal thin films prepared by chemical vapor deposition (CVD) including conformal step converage, high electromigration resistance and low resistivity make them attractive for gate, interconnect, contact, diffusion barrier and via plug metalizations. However, the application of CVD tungsten and molybdenum to VLSI processing has been impeded by the secondary reactions caused by the florine ligands of the elemental source reagents used in the CVD process. These reactions ultimately lead to the failure of the device. The objectives of the proposed research are the elaboration of a set of molecular design criteria for refractory metal source reagents and the identification of a novel organotungsten CVD source reagent which revolutionizes VLSI metalization. These goals will be met by applying a multidisciplinary approach in which results from film growth and fundamental decomposition studies are used to refine the molecular structure of the source reagents. The immediate commercial impact of CVD refractory metals on VLSI processing would be the advance to a new generation of metalization structures offering superior performance and stability relative to existing components.