Nonlinear Optics Involving Carrier Transport in Semiconductors

点击翻译按钮获取中文摘要

This proposal will investigate carrier transport as a way of increasing the sensitivity of optical nonlinearities in semiconductors. The goal is to obtain all-optical information switching at intensity levels approaching W/cm2 for applications in optical information processing, optical computing, neural networks, optical communications. Three studies are proposed, as justified by previous experiments and modelling: 1) Optical bistability at 1.06 um in a hetero-Schottky barrier in InP/GaInAsP. Material will be grown by LPE in our laboratory; 2) Nonlinear optical switching in MQW-H-nipi structures. Material grown by MBE will be provided by Hughes Research Laboratory; and 3) Near-band-edge electrorefractive photo-refractivity in GaAs, making possible phase conjugation and locking of semiconductor laser arrays with a speed a million times faster than previously. Lasers will be provided by Sarnoff and Spectra-Diode Laboratories.