Nonlinear Optics Involving Carrier Transport in Semiconductors

涉及半导体载流子传输的非线性光学

• 批准号: 9006551
• 负责人: Elsa Garmire
• 金额: $ 30万
• 依托单位: University of Southern California
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-09-01 至 1993-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9006551&HistoricalAwards=false
• 关键词: Nonlinear; Optics; Involving; Carrier; Transport

This proposal will investigate carrier transport as a way of increasing the sensitivity of optical nonlinearities in semiconductors. The goal is to obtain all-optical information switching at intensity levels approaching W/cm2 for applications in optical information processing, optical computing, neural networks, optical communications. Three studies are proposed, as justified by previous experiments and modelling: 1) Optical bistability at 1.06 um in a hetero-Schottky barrier in InP/GaInAsP. Material will be grown by LPE in our laboratory; 2) Nonlinear optical switching in MQW-H-nipi structures. Material grown by MBE will be provided by Hughes Research Laboratory; and 3) Near-band-edge electrorefractive photo-refractivity in GaAs, making possible phase conjugation and locking of semiconductor laser arrays with a speed a million times faster than previously. Lasers will be provided by Sarnoff and Spectra-Diode Laboratories.

该提案将调查 作为一种运输方式， 提高灵敏度 光学非线性 半导体 目标是 获得全光信息 强度级别切换 接近W/cm 2的应用 在光学信息处理中， 光学计算，神经网络， 光通信 三 建议进行研究，理由如下： 通过以前的实验， 建模：1）光学双稳态 在1.06 μ m的异质肖特基 InP/GaInAsP中的势垒。 材料 将由LPE在我们的 实验室; 2）非线性光学 MQW-H-nipi结构中的切换。 MBE生长的材料将是 由Hughes Research提供 实验室; 3）近带边 电折射光致发光活性 在GaAs中， 共轭和锁定 半导体激光器阵列 速度比 以前。 将提供激光 作者：Sarnoff & Spectra-Diode Laboratories.