Nonlinear Optics Involving Carrier Transport in Semiconductors

这项提议将研究载流子输运作为提高半导体中光学非线性的灵敏度的一种方式。其目标是获得在光学信息处理中应用的接近W/cm2的强度级的全光信息开关，光计算、神经网络、光通信。提出了三项研究，1)InP/GaInAsP异质肖特基势垒中1.06微米的光学双稳态。2)MQW-H-NIPI结构中的非线性光开关。由分子束外延生长的材料将由休斯研究实验室提供；(3)近带边电折变光折变特性，使半导体激光器阵列的相位共轭和锁定成为可能，其速度比以前快一百万倍。激光器将由Sarnoff和Spectra-Diode实验室提供。

This proposal will investigate carrier transport as a way of increasing the sensitivity of optical nonlinearities in semiconductors. The goal is to obtain all-optical information switching at intensity levels approaching W/cm2 for applications in optical information processing, optical computing, neural networks, optical communications. Three studies are proposed, as justified by previous experiments and modelling: 1) Optical bistability at 1.06 um in a hetero-Schottky barrier in InP/GaInAsP. Material will be grown by LPE in our laboratory; 2) Nonlinear optical switching in MQW-H-nipi structures. Material grown by MBE will be provided by Hughes Research Laboratory; and 3) Near-band-edge electrorefractive photo-refractivity in GaAs, making possible phase conjugation and locking of semiconductor laser arrays with a speed a million times faster than previously. Lasers will be provided by Sarnoff and Spectra-Diode Laboratories.