Carrier Transport in Semiconductors and Nonlinear Optics

半导体和非线性光学中的载流子传输

• 批准号: 9222640
• 负责人: Elsa Garmire
• 金额: $ 25.15万
• 依托单位: University of Southern California
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-09-01 至 1995-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9222640&HistoricalAwards=false
• 关键词: Carrier; Transport; Semiconductors; Nonlinear; Optics

9222640 Garmire This project will continue our on-going investigations of nonlinear optics and carrier transport in semiconductors. This transport in semniconductors and offers promise for improving the optical response of semiconductors. By using advanced materials, which include multiple quantum wells (MQW) in dping superlatices (nipi structures), sensitive and large nonlinearities at useful wavelengths can be achieved. Several collaborative projects are proposed which will all contribute to improved usefulness of semiconductor materials for nonlinear and optical applications. These are: a) Mode-locking of Nd:YAG laser using saturabel absorption of GaInAsP at 1.06 um, b) Improved optical modulators consisting of SPSLS MQ W waveguides in p-i-n and inpi structures, C) Psec studies of carrier transprot in strained-layer InGaAs/GaAs MQW hetero-nipi's modulators, d) Eperiments to better understand MQW hetero-nipi's e) Modelling carrier transport in MQW hetero-nipi's, f) improved design for MQW hetero-nipi's. Investigations to date at 980 nm will be extended to 1.3 um and/or 1.55 um in the proposed new project. The proposed studies will provide no only more useful nonlinear optical devies, but also assist in the understanding of carrier transport within strained materials in the presence of both quantum wells and inernal fields. The results are needed for the better understanding of opto-electronic lasers, modulatores, detectores, and optical switches. *** v s t nipitransportExperimentsModelingheaternip'sheterodevicesinternalmodulatorsdetectors-going investigations of nonlinear optics and carrier trans port in semiconduc Q ` d m x L Q $ $ ( F / Q $ Q / 1 Courier Symbol & Arial 5 Courier New 0 ( 1 r } D c ` d m x 1 R Y | = ' 3 O " h % % ) ( S R:\WW20USER\ABSTRACT.DOT abstract Alicia E. Harris Alicia E. Harris

9222640 Garmire这个项目将继续我们正在进行的非线性光学和半导体载流子输运的研究。 半导体中的这种传输为改善半导体的光学响应提供了希望。 通过使用先进的材料，其中包括多量子威尔斯（MQW）的dping超晶格（nipi结构），敏感和大的非线性在有用的波长可以实现。 提出了几个合作项目，这将有助于提高有用的半导体材料的非线性和光学应用。 这些是：a）利用GaInAsP在1.06 μ m处的饱和吸收实现Nd：YAG激光器的锁模，B）改进的p-i-n和inpi结构的SPSLS MQW波导光调制器，C）应变层InGaAs/GaAs MQW异质nipi调制器中载流子输运的Psec研究，d）更好地理解MQW异质nipi调制器的实验，e）模拟MQW异质nipi调制器中载流子输运，f）改进的MQW异质nipi调制器设计。 在拟议的新项目中，迄今为止在980 nm的研究将扩展到1.3 um和/或1.55 um。 这些研究不仅可以提供更有用的非线性光学装置，而且有助于理解量子威尔斯和内场共同存在下应变材料中载流子的输运。这些结果对于更好地理解光电子激光器、调制器、探测器和光开关是必要的。 *** v 非线性传输实验模拟非线性器件内部调制器探测器非线性光学和载流子传输的研究进展 Q ` D M X L Q $ $ ( F / Q $ Q / 1件 Symbol Arial 5 Cash New 0 ( 1 R } D C ` D M X 1 R Y | = ' 3 O " H % % ) ( S R：\WW20USER\ABSTRACT.DOT摘要 艾丽西娅·E哈里斯·艾丽西娅·E.哈里斯