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Carrier Transport in Semiconductors and Nonlinear Optics

Carrier Transport in Semiconductors and Nonlinear Optics
半导体和非线性光学中的载流子传输
批准号:
9222640
负责人:
Elsa Garmire
金额:
$25.15万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1993
资助国家:
美国
项目状态:
已结题
起止时间:
1993-09-01 至 1995-08-31

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中文摘要
翻译
9222640 Garmire这个项目将继续我们正在进行的非线性光学和半导体载流子输运的研究。 半导体中的这种传输为改善半导体的光学响应提供了希望。 通过使用先进的材料,其中包括多量子威尔斯(MQW)的dping超晶格(nipi结构),敏感和大的非线性在有用的波长可以实现。 提出了几个合作项目,这将有助于提高有用的半导体材料的非线性和光学应用。 这些是:a)利用GaInAsP在1.06 μ m处的饱和吸收实现Nd:YAG激光器的锁模,B)由p-i-n和inpi结构中的SPSLS MQ W波导组成的改进光学调制器,C)应变层InGaAs/GaAs MQW异质nipi调制器中载流子输运的Psec研究,d)更好地理解MQW异质nipi的实验e)模拟MQW异质nipi中的载流子输运,f)MQW异质nipi的改进设计。 在拟议的新项目中,迄今为止在980 nm的研究将扩展到1.3 um和/或1.55 um。 这些研究不仅可以提供更有用的非线性光学器件,而且有助于理解在量子威尔斯阱和内场共同作用下应变材料中载流子的输运。这些结果对于更好地理解光电子激光器、调制器、探测器和光开关是必要的。 *** v 非线性传输实验模拟非线性器件内部调制器探测器非线性光学和载流子传输的研究进展 Q ` D M X L Q $ $ ( F / Q $ Q / 1件 Symbol Arial 5 Cash New 0 ( 1 R } D C ` D M X 1 R Y | = ' 3 O " H % % ) ( S R:\WW20USER\ABSTRACT.DOT摘要 艾丽西娅·E哈里斯·艾丽西娅·E.哈里斯
英文摘要
9222640 Garmire This project will continue our on-going investigations of nonlinear optics and carrier transport in semiconductors. This transport in semniconductors and offers promise for improving the optical response of semiconductors. By using advanced materials, which include multiple quantum wells (MQW) in dping superlatices (nipi structures), sensitive and large nonlinearities at useful wavelengths can be achieved. Several collaborative projects are proposed which will all contribute to improved usefulness of semiconductor materials for nonlinear and optical applications. These are: a) Mode-locking of Nd:YAG laser using saturabel absorption of GaInAsP at 1.06 um, b) Improved optical modulators consisting of SPSLS MQ W waveguides in p-i-n and inpi structures, C) Psec studies of carrier transprot in strained-layer InGaAs/GaAs MQW hetero-nipi's modulators, d) Eperiments to better understand MQW hetero-nipi's e) Modelling carrier transport in MQW hetero-nipi's, f) improved design for MQW hetero-nipi's. Investigations to date at 980 nm will be extended to 1.3 um and/or 1.55 um in the proposed new project. The proposed studies will provide no only more useful nonlinear optical devies, but also assist in the understanding of carrier transport within strained materials in the presence of both quantum wells and inernal fields. The results are needed for the better understanding of opto-electronic lasers, modulatores, detectores, and optical switches. *** v s t nipitransportExperimentsModelingheaternip'sheterodevicesinternalmodulatorsdetectors-going investigations of nonlinear optics and carrier trans port in semiconduc Q ` d m x L Q $ $ ( F / Q $ Q / 1 Courier Symbol & Arial 5 Courier New 0 ( 1 r } D c ` d m x 1 R Y | = ' 3 O " h % % ) ( S R:\WW20USER\ABSTRACT.DOT abstract Alicia E. Harris Alicia E. Harris
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