Carrier Transport in Semiconductors and Nonlinear Optics

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9222640 Garmire This project will continue our on-going investigations of nonlinear optics and carrier transport in semiconductors. This transport in semniconductors and offers promise for improving the optical response of semiconductors. By using advanced materials, which include multiple quantum wells (MQW) in dping superlatices (nipi structures), sensitive and large nonlinearities at useful wavelengths can be achieved. Several collaborative projects are proposed which will all contribute to improved usefulness of semiconductor materials for nonlinear and optical applications. These are: a) Mode-locking of Nd:YAG laser using saturabel absorption of GaInAsP at 1.06 um, b) Improved optical modulators consisting of SPSLS MQ W waveguides in p-i-n and inpi structures, C) Psec studies of carrier transprot in strained-layer InGaAs/GaAs MQW hetero-nipi's modulators, d) Eperiments to better understand MQW hetero-nipi's e) Modelling carrier transport in MQW hetero-nipi's, f) improved design for MQW hetero-nipi's. Investigations to date at 980 nm will be extended to 1.3 um and/or 1.55 um in the proposed new project. The proposed studies will provide no only more useful nonlinear optical devies, but also assist in the understanding of carrier transport within strained materials in the presence of both quantum wells and inernal fields. The results are needed for the better understanding of opto-electronic lasers, modulatores, detectores, and optical switches. *** v s t nipitransportExperimentsModelingheaternip'sheterodevicesinternalmodulatorsdetectors-going investigations of nonlinear optics and carrier trans port in semiconduc Q ` d m x L Q $ $ ( F / Q $ Q / 1 Courier Symbol & Arial 5 Courier New 0 ( 1 r } D c ` d m x 1 R Y | = ' 3 O " h % % ) ( S R:\WW20USER\ABSTRACT.DOT abstract Alicia E. Harris Alicia E. Harris