Chemistry of Diamond Nucleation and Growth: Kinetic Measurement, Modeling, and Film Characterization via REMP/MSand Solid State NMR

金刚石成核和生长的化学：通过 REMP/MS 和固态 NMR 进行动力学测量、建模和薄膜表征

• 批准号: 9006705
• 负责人: Karen Gleason
• 金额: --
• 依托单位: Massachusetts Institute of Technology
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-08-15 至 1994-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9006705&HistoricalAwards=false
• 关键词: Chemistry; Diamond; Nucleation; Growth; Kinetic

Diamond thin films have numerous potential technological applications due to their extraordinary physical properties. Improvements in film quality, deposition rate, and uniformity are keys to the realization of this potential, requiring understanding and control of diamond nucleation and growth. In particular, heteroepitaxial diamond thin films for semiconductor devices have yet to be achieved. A multifaceted approach involving both experimental measurements and theoretical predictions of species impinging upon the growing surface, coupled with characterization and modeling is essential for unlocking the complexities of diamond deposition chemistry. The PIs plan to develop a mechanistic understanding of diamond growth which can be used for the design of equipment and processes for crystalline, high quality diamond thin films. The kinetic mechanisms of diamond growth will be experimentally probed using a hot-filament reactor. Using molecular beam sampling to extract the species striking the heated wafer surface, the precursors for diamond deposition will be measured using Resonancely Enhanced Multiphoton Ionization Mass Spectrometry (REMPI/MS). The gas phase concentrations will also be measured using Laser Induced Fluorescence (LIF) and Coherent, Anti-Stokes Raman Spectroscopy (CARS). Both chemical and physical transport models will be constructed and tested against the experimental data in order to identify the main processes or steps that control the kinetics of diamond nucleation, growth, and defect formation. The defect structures of diamond films will be measured using Carbon 13 solid state Nuclear Magnetic Resonance (NMR) as well as conventional techniques. The NMR results will be analyzed to identify the type and quantity of defects and will be correlated to conventional techniques such as Raman scattering to relate these studies to others in the literature. Selective Carbon 13 isotopic labeling will be used to gain insight into the kinetics of diamond formation. The nucleation of diamond growth will be quantified using Scanning Tunneling Microscopy (STM) to count and measure the nuclei during the initial phases of growth. Devices will be fabricated and tested, and their characteristics will be correlated with the diamond growth parameters and film characterization.

金刚石薄膜具有许多潜在的技术 应用由于其非凡的物理性能。 薄膜质量、沉积速率和均匀性的改善 是实现这一潜力的关键， 理解和控制金刚石成核和生长。 特别地，用于制造金刚石薄膜的异质外延金刚石薄膜 半导体器件还有待实现。一个多方面 方法涉及实验测量和 理论预测的物种撞击在生长 表面，再加上表征和建模， 对于解开钻石沉积的复杂性至关重要 化学. PI计划开发钻石的机械理解 增长，可用于设备的设计， 用于结晶的高质量金刚石薄膜的工艺。 金刚石生长的动力学机制将是 使用热灯丝反应器进行实验探索。使用 分子束采样，以提取撞击 加热晶片表面，金刚石沉积的前体 将使用共振增强多光子 电离质谱法（REMPI/MS）。 气相 浓度也将使用激光诱导 荧光（LIF）和相干反斯托克斯拉曼 光谱学（汽车）。 化学和物理迁移 模型将被构建和测试对实验 数据，以确定主要过程或步骤， 控制金刚石成核、生长和缺陷的动力学 阵 金刚石薄膜的缺陷结构将是 使用碳13固态核磁测量 共振（NMR）以及常规技术。 的NMR 将分析结果，以确定类型和数量 缺陷，并将与传统的技术， 作为拉曼散射，将这些研究与 文学 选择性碳13同位素标记将是 用于深入了解钻石形成的动力学。 金刚石生长的成核将使用 扫描隧道显微镜（STM）计数和测量 在生长的初始阶段。 设备将 制造和测试，他们的特点将是 与金刚石生长参数和薄膜相关 特征化