Presidential Young Investigators Award: Modification of Protein Structure Near Charged Surfaces
总统青年研究员奖:带电表面附近蛋白质结构的修饰
基本信息
- 批准号:9057119
- 负责人:
- 金额:$ 31.25万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:1990
- 资助国家:美国
- 起止时间:1990-07-01 至 1996-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The focus of this PYI research is on achieving a fundamental understanding of thin films and Interfacial Transport by utilization of state-of-the-art NMR techniques. Several diverse areas of focus are: Hydrogen in SiO2 Thin Films and at Si/SiO2 Interfaces - The use of 100 A thick films and lower growth temperatures in integrated circuit manufacture leads to increased hydrogen incorporation. In SiO2 films, hydrogen is proposed to pasivate electrical defects, modify oxidation kinetics, and alter film properties. Crystalline Diamond Thin Films - Improved understanding of diamond nucleation and growth is needed in order to deposit single crystalline films over large areas, as desired for semiconductor applications. Photoresist Thin Films - Efforts to optimize and control microlithographic processes are influenced by the density variations and motion in polymeric photoresist films. Proteins Near Charge Interfaces - Transport across biological membranes and several bioseparation and biocatalysis techniques involve proteins near charged interfaces. Changes in tertiary protein structure induced by thorough preferential interaction with charged and polar protein segments can be observed directly with NMR. Reversed micelles, having few chemical components and large surface areas, provide a relatively simple system for initial study. A fundamental understanding of thin films and interfaces is a crucial components of process optimization in the microelectronics and biotechnology industries. Unique and valuable information is elucidated through the application of selected nuclear magnetic resonance (NMR) techniques to study the atomic scale structure of thin films and interfaces. This knowledge can be used to develop and test atomistic models of film growth and interfacial chemistry, with the ultimate goal of tailoring chemical processes for desired application.
保华研究的重点是实现基本的 了解薄膜和界面传输, 利用最先进的核磁共振技术。 几 不同的重点领域是: SiO2薄膜和Si/SiO2界面上的氢-应用 100埃厚的薄膜和较低的生长温度, 集成电路制造导致氢气增加 合并。 在SiO2薄膜中,氢被提议用于 钝化电缺陷,改变氧化动力学,并 改变膜的性质。 结晶金刚石薄膜-提高对 为了存款,需要金刚石成核和生长 单晶薄膜在大面积,如所需的 半导体应用。 光致抗蚀剂薄膜-优化和控制的努力 微光刻工艺受密度的影响 聚合物光致抗蚀剂膜的变化和运动。 电荷界面附近的蛋白质-跨生物 膜和几种生物分离和生物催化 技术涉及带电界面附近的蛋白质。 变化 在蛋白质三级结构诱导下, 与带电和极性蛋白质片段的相互作用可以 用NMR直接观察。 反胶束,具有很少的 化学成分和大的表面积,提供了一个 相对简单的系统进行初步研究。 对薄膜和界面的基本理解是 过程优化的关键组成部分, 微电子和生物技术产业。 独特而 有价值的信息是通过应用阐明 选择核磁共振(NMR)技术进行研究 薄膜和界面的原子尺度结构。 这 知识可以用来开发和测试原子模型, 薄膜生长和界面化学,最终目标是 为所需的应用定制化学过程。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Karen Gleason其他文献
Karen Gleason的其他文献
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{{ truncateString('Karen Gleason', 18)}}的其他基金
Nuclear Magnetic Resonance of Porous Silicon Surfaces
多孔硅表面的核磁共振
- 批准号:
9321224 - 财政年份:1994
- 资助金额:
$ 31.25万 - 项目类别:
Continuing grant
Engineering Research Equipment: Solid-State NMR Spectrometer Upgrade for Polymers
工程研究设备:聚合物固态核磁共振波谱仪升级
- 批准号:
9411656 - 财政年份:1994
- 资助金额:
$ 31.25万 - 项目类别:
Standard Grant
Chemistry of Diamond Nucleation and Growth: Kinetic Measurement, Modeling, and Film Characterization via REMP/MSand Solid State NMR
金刚石成核和生长的化学:通过 REMP/MS 和固态 NMR 进行动力学测量、建模和薄膜表征
- 批准号:
9006705 - 财政年份:1990
- 资助金额:
$ 31.25万 - 项目类别:
Continuing grant
Hydrogen in Silicon Dioxide Thin Films Studied by Nuclear Magnetic Resonance
通过核磁共振研究二氧化硅薄膜中的氢
- 批准号:
8918834 - 财政年份:1990
- 资助金额:
$ 31.25万 - 项目类别:
Continuing grant
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