Nuclear Magnetic Resonance of Porous Silicon Surfaces

小行星9321224 与多孔硅表面电子活性态的化学钝化相关的基础材料科学问题将首次通过H，F和Si NMR进行研究。 所采用的方法将允许获得独特的、定量的和非破坏性的化学信息。 将研究阳极氧化条件、衬底掺杂和取向、在各种环境中的热处理、附加蚀刻以及在多孔硅层顶部上的膜生长的影响。 光致发光测量将直接将表面成分与光学性质联系起来。 目标是产生具有低缺陷密度和增强的光致发光和电致发光性质的稳定表面。 %%%% 多孔硅中的微观间距可以提供独特的量子限制效应，从而产生非常理想的光电特性。 这种材料可以很容易地通过在浓HF中阳极氧化单晶硅晶片来生产，并且这种类型的研究有可能为开发廉价的光学器件提供基本基础，这些光学器件对于增强用于计算机、信息处理和显示技术的硅基集成电路的能力是兼容的和有用的。 ***

9321224 Gleason Fundamental materials science issues related to the chemical passivation of electronically active states on porous silicon surfaces will be investigated for the first time by H,F, and Si NMR. The approach pursued will allow unique, quantitative, and non-destructive chemical information to be obtained. Effects of anodization conditions, substrate doping and orientation, thermal treatments in a variety of ambients, additional etching, and film growth on top of porous silicon layers will be studied. Photoluminescence measurements will directly link surface composition to optical properties. the goal is to produce stable surfaces with low defect densities and enhanced photoluminescence and electroluminescence properties. %%%% Microscopic spacings in porous silicon may provide unique quantum- confinement effects giving rise to very desirable optoelectronic properties. This material can be readily produced by anodizing single-crystal silicon wafers in concentrated HF, and research of this type has potential to provide the fundamental basis for development of inexpensive optical devices which are compatible and useful for enhancing the capabilities of silicon-based integrated circuitry used in computers, information processing, and display technologies. ***