Nuclear Magnetic Resonance of Porous Silicon Surfaces

多孔硅表面的核磁共振

• 批准号: 9321224
• 负责人: Karen Gleason
• 金额: --
• 依托单位: Massachusetts Institute of Technology
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-06-01 至 1997-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9321224&HistoricalAwards=false
• 关键词: Nuclear; Magnetic; Resonance; Porous; Silicon

9321224 Gleason Fundamental materials science issues related to the chemical passivation of electronically active states on porous silicon surfaces will be investigated for the first time by H,F, and Si NMR. The approach pursued will allow unique, quantitative, and non-destructive chemical information to be obtained. Effects of anodization conditions, substrate doping and orientation, thermal treatments in a variety of ambients, additional etching, and film growth on top of porous silicon layers will be studied. Photoluminescence measurements will directly link surface composition to optical properties. the goal is to produce stable surfaces with low defect densities and enhanced photoluminescence and electroluminescence properties. %%%% Microscopic spacings in porous silicon may provide unique quantum- confinement effects giving rise to very desirable optoelectronic properties. This material can be readily produced by anodizing single-crystal silicon wafers in concentrated HF, and research of this type has potential to provide the fundamental basis for development of inexpensive optical devices which are compatible and useful for enhancing the capabilities of silicon-based integrated circuitry used in computers, information processing, and display technologies. ***

9321224格里森基础材料科学问题与多孔硅表面电子活跃态的化学钝化有关，将首次通过H，F和Si核磁共振进行研究。所采用的方法将允许获得独特的、定量的和非破坏性的化学信息。将研究阳极氧化条件、衬底掺杂和取向、不同气氛中的热处理、额外的蚀刻以及多孔硅层顶部的薄膜生长的影响。光致发光测量将直接将表面组成与光学性质联系起来。其目标是产生稳定的表面，具有低缺陷密度和增强的光致发光和电致发光性能。多孔硅中的微间距可以提供独特的量子限制效应，从而产生非常理想的光电性能。这种材料可以很容易地通过在浓缩的HF中阳极氧化单晶硅晶片来生产，这种类型的研究有可能为开发兼容并有助于提高用于计算机、信息处理和显示技术中的硅基集成电路的能力的廉价光学器件提供基本的基础。***