RIA: Simulating Patterned Substrate Epitaxy of Gallium- Arsenide Rand Related Compounds

开发一种计算机程序，可以模拟金属有机化学气相沉积(OMCVD)在图案化衬底上生长GaAs及其相关化合物的过程。生长模拟基于Wulff结构技术，该技术已被证明能够准确预测在图案化衬底上生长的外延层的形状。为了进行Wulff结构，需要详细了解生长率与温度的关系。因此，将对OMCVD生长速率与晶体取向、生长温度和合金成分的函数关系进行全面的研究。这样的模拟程序将对设计离散和/或集成的微波毫米波和光电子器件和电路非常有用。

To develop a computer program which can simulate the growth of GaAs and related compounds on patterned substrates by Organometallic Chemical Vapor Deposition (OMCVD). The growth simulation is based on the Wulff construction technique which has been shown to accurately predict the shapes of epitaxial layers grown on patterned substrates. In order to perform the Wulff constructions a detailed knowledge of the oreintation dependence of the growth rate is needed. Therefore, a comprehensive investigation of the OMCVD growth rate as a function of crystallographic orientation, growth temperature, and alloy composition will be conducted. Such a simulation program will be very useful for designing discrete and/or integrated microwave millimeter-wave, and optoelectronic devices and circuits.