RIA: Simulating Patterned Substrate Epitaxy of Gallium- Arsenide Rand Related Compounds

开发模拟金属有机化学气相沉积（OMCVD）在图案化基底上生长砷化镓及相关化合物的计算机程序。生长模拟是基于伍尔夫构造技术，该技术已被证明可以准确预测在图案衬底上生长的外延层的形状。为了进行伍尔夫构造，需要详细了解增长率的方向依赖性。因此，将全面研究OMCVD生长速率随晶体取向、生长温度和合金成分的变化规律。这样的仿真程序将对设计分立和/或集成微波毫米波和光电子器件和电路非常有用。

To develop a computer program which can simulate the growth of GaAs and related compounds on patterned substrates by Organometallic Chemical Vapor Deposition (OMCVD). The growth simulation is based on the Wulff construction technique which has been shown to accurately predict the shapes of epitaxial layers grown on patterned substrates. In order to perform the Wulff constructions a detailed knowledge of the oreintation dependence of the growth rate is needed. Therefore, a comprehensive investigation of the OMCVD growth rate as a function of crystallographic orientation, growth temperature, and alloy composition will be conducted. Such a simulation program will be very useful for designing discrete and/or integrated microwave millimeter-wave, and optoelectronic devices and circuits.