RIA: Simulating Patterned Substrate Epitaxy of Gallium- Arsenide Rand Related Compounds

RIA：模拟砷化镓和相关化合物的图案化衬底外延

• 批准号: 9008973
• 负责人: Stephen Jones
• 金额: $ 5.92万
• 依托单位: University of Virginia Main Campus
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-07-01 至 1992-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9008973&HistoricalAwards=false
• 关键词: RIA; Simulating; Patterned; Substrate; Epitaxy

To develop a computer program which can simulate the growth of GaAs and related compounds on patterned substrates by Organometallic Chemical Vapor Deposition (OMCVD). The growth simulation is based on the Wulff construction technique which has been shown to accurately predict the shapes of epitaxial layers grown on patterned substrates. In order to perform the Wulff constructions a detailed knowledge of the oreintation dependence of the growth rate is needed. Therefore, a comprehensive investigation of the OMCVD growth rate as a function of crystallographic orientation, growth temperature, and alloy composition will be conducted. Such a simulation program will be very useful for designing discrete and/or integrated microwave millimeter-wave, and optoelectronic devices and circuits.

开发一个计算机程序来模拟 GaAs和相关化合物的图案化衬底上， 有机物化学气相沉积（OMCVD）。 的 生长模拟基于Wulff结构 该技术已被证明可以准确预测 在图案化衬底上生长的外延层的形状。 为了执行Wulff构造， 了解增长率的方向依赖性 是必要的。 因此，全面调查 OMCVD生长速率作为晶体学的函数 取向、生长温度和合金成分将 进行。 这样的模拟程序将非常 用于设计分立和/或集成微波 毫米波和光电器件和电路。