100-300 GHz Modulated Impurity Concentration Transferred Electron Devices

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Presently, there is no single solid state device which generates moderate amounts of low noise power, and can be used in receivers as a local oscillator source over the 200-300 GHz range. However, we propose a novel Transferred Electron Device (TED) termed the Modulated Impurity Concentration Transferred Electron Device (MICTED) that is expected to generate milliwatts of power up to 300 GHz. The MICTED differs from conventional TEDs by incorporating a modulated doping profile which substantially increases the harmonic content in the current waveform. The increased harmonic content of the MICTED leads to second and third harmonic Transferred Electron Oscillators (TEOs) which deliver more power than TEOs using conventional TEDs. This study will assess the merits of the MICTED as a solid state oscillator source between 100 and 300 GHz, and involve device theory and design, device fabrication and testing, and device simulation. The MICTED is expected to have a significant impact on millimeter wave research where low noise and moderate power local oscillator sources are in great need. Par one of the proposed research is a fundamental feasibility study of the MICTED. This section propose Monte Carlo and Drift/Diffusion device simulations that include harmonic balance calculations. Also, a 94 GHz prototype GaAs MICTED will be designed, fabricated, and tested. In Part two, we will theoretically and experimentally investigate optimized InP MICTEDs for operation up to 300 GHz.