100-300 GHz Modulated Impurity Concentration Transferred Electron Devices

100-300 GHz 调制杂质浓度转移电子器件

• 批准号: 9202037
• 负责人: Stephen Jones
• 金额: $ 33万
• 依托单位: University of Virginia Main Campus
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-11-01 至 1996-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9202037&HistoricalAwards=false
• 关键词: 100; 300; GHz; Modulated; Impurity

Presently, there is no single solid state device which generates moderate amounts of low noise power, and can be used in receivers as a local oscillator source over the 200-300 GHz range. However, we propose a novel Transferred Electron Device (TED) termed the Modulated Impurity Concentration Transferred Electron Device (MICTED) that is expected to generate milliwatts of power up to 300 GHz. The MICTED differs from conventional TEDs by incorporating a modulated doping profile which substantially increases the harmonic content in the current waveform. The increased harmonic content of the MICTED leads to second and third harmonic Transferred Electron Oscillators (TEOs) which deliver more power than TEOs using conventional TEDs. This study will assess the merits of the MICTED as a solid state oscillator source between 100 and 300 GHz, and involve device theory and design, device fabrication and testing, and device simulation. The MICTED is expected to have a significant impact on millimeter wave research where low noise and moderate power local oscillator sources are in great need. Par one of the proposed research is a fundamental feasibility study of the MICTED. This section propose Monte Carlo and Drift/Diffusion device simulations that include harmonic balance calculations. Also, a 94 GHz prototype GaAs MICTED will be designed, fabricated, and tested. In Part two, we will theoretically and experimentally investigate optimized InP MICTEDs for operation up to 300 GHz.

目前，没有单一的固体 所述设备生成 中等量的低噪音 功率，并可用于接收器 作为本地振荡器源， 200-300 GHz范围。 但我们 提出一个新的转让 电子设备（TED）被称为 调制杂质浓度 转移电子器件 （MICTED）预计， 产生毫瓦功率， 300千兆赫。 MICTED不同于 传统的TED， 调制的掺杂分布，其 显著地增加 电流中的谐波含量 波形 增加的谐波 MICTED的内容导致 二次和三次谐波 转移电子振荡器 （TEO）提供更多功率 比使用传统TED的TEO更好。 本研究将评估 作为一个固态的MICTED 振荡器源在100和 300 GHz，并涉及器件理论 设计、器件制造和 测试和器件模拟。 预计该会议将有一个 对毫米波有重大影响 波浪研究，低噪音， 中等功率本振 资源非常需要。 其中一项研究是 基本可行性研究 的MICTED。 本节建议 蒙特卡罗和漂移/扩散 设备模拟，包括 谐波平衡计算 此外，一个94 GHz的原型GaAs MICTED将被设计， 制作和测试。 部分 第二，理论上， 实验研究 优化的InP MICTEDs用于操作 高达300 GHz。