Research Initiation Award: Heteroepitaxial Layered Structures of Aluminum Nitride and Beta Silicon Carbide (REU Supplement)

硅上氮化铝的薄层结构 碳化物和碳化硅在氮化铝上的应用 通过异质外延化学气相沉积。 碳化硅 最初是通过将 将硅衬底的表面涂覆到碳化硅上，并且通过 用硅烷和乙烯进行化学气相沉积。 外延 氮化铝是用金属有机化学气相法生产的 证词 对这些结构的稳定性进行了评价 退火研究和热力学建模。 用X射线衍射表征所制备的材料， 卢瑟福背散射光谱法，扫描电子 显微镜和二次离子质谱。 晶体缺陷密度的降低是预期的， 在碳化硅上外延氮化铝层，而 氮化铝上的外延碳化硅层应该 与衬底电隔离。 这项研究将 导致这些器件的结构和电气质量的改善 半导体，增加其应用潜力， 电子和光电器件。

Thin-layered structures of both aluminum nitride on silicon carbide and silicon carbide on aluminum nitride are developed by heteroepitaxial chemical vapor deposition. Silicon carbide in the beta form is produced initially by converting the surface of a silicon substrate to silicon carbide, and by chemical vapor deposition with silane and ethene. Epitaxial aluminum nitride is produced by metalorganic chemical vapor deposition. The stabilities of these structures are evaluated with annealling studies and thermodynamic modelling. Materials produced are characterized with X-ray diffraction, Rutherford backscattering spectrometry, scanning electron microscopy, and secondary-ion mass spectroscopy. A reduction in the crystal defect density in expected for epitaxial aluminum nitride layers on silicon carbide, while epitaxial silicon carbide layers on aluminum nitride should be electrically isolated from the substrate. This research will result in improved structural and electrical quality of these semiconductors, increasing their potential for applications in electronic and optoelectronic devices.