Research Initiation Award: Heteroepitaxial Layered Structures of Aluminum Nitride and Beta Silicon Carbide (REU Supplement)

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Thin-layered structures of both aluminum nitride on silicon carbide and silicon carbide on aluminum nitride are developed by heteroepitaxial chemical vapor deposition. Silicon carbide in the beta form is produced initially by converting the surface of a silicon substrate to silicon carbide, and by chemical vapor deposition with silane and ethene. Epitaxial aluminum nitride is produced by metalorganic chemical vapor deposition. The stabilities of these structures are evaluated with annealling studies and thermodynamic modelling. Materials produced are characterized with X-ray diffraction, Rutherford backscattering spectrometry, scanning electron microscopy, and secondary-ion mass spectroscopy. A reduction in the crystal defect density in expected for epitaxial aluminum nitride layers on silicon carbide, while epitaxial silicon carbide layers on aluminum nitride should be electrically isolated from the substrate. This research will result in improved structural and electrical quality of these semiconductors, increasing their potential for applications in electronic and optoelectronic devices.