MRI: Aquisition of a Hall Effect Measurement System for Characterizing Novel Semiconductors
MRI: Aquisition of a Hall Effect Measurement System for Characterizing Novel Semiconductors
批准号:
0619423
负责人:
James Edgar
金额:
$15.46万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2006
资助国家:
美国
项目状态:
已结题
起止时间:
2006-09-01 至 2008-08-31
中文摘要
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英文摘要
Technical AbstractKansas State University will acquire a Hall effect measurement system for characterizing the electron transport properties of novel semiconductors. This is a highly sensitive system capable of measurements over a wide resistance range (0.05 mW to 200 GW), with a maximum voltage of 95 V, and minimum and maximum currents of 500 fA and 100 mA respectively. The system includes a variable gap electromagnet with a maximum field strength of 1.04 T. Computer controlled variations of the magnetic field and applied voltage makes it possible to distinguish the electrical properties of individual layers in multilayer samples. Many semiconductors with a wide range of applications will be studied including B12As2 -a candidate for radiation detection and direct nuclear to electrical energy conversion devices, heavily doped aluminum nitride for deep ultraviolet LEDs and laser diodes, HgI2 and CdZnTe for solid state radiation sensors, and other semiconductors of emerging importance. The state-of-the-art capabilities and ease of use of this system will help to promote collaborations between students and faculty in different disciplines on campus and between universities. Hall effect measurements will be incorporated into demonstrations and experiments in undergraduate engineering courses to enhance student learning of mobility and charge carrier concentrations, as measured by this widely employed technique. Lay AbstractHall effect measurements are the most common method to determine the electrical properties of a semiconductor, such as electron speed and concentration. These properties must be known to design and fabricate all types of electronic devices such as light emitting diodes (LEDs), laser diodes, and sensors to detect light (from ultraviolet to infrared) and nuclear radiation. Such devices are found in traffic lights, automobiles, laser printers, compact disc players, and environmental and safety monitors, just to cite a few examples. The new Hall effect measurement system will enhance a growing cross-disciplinary program at Kansas State University in sensor development. Characterization provided by this system will lead to better materials and new, more efficient and sensitive sensors. The system will also help with student education; new experiments using this system will be incorporated into the laboratories of undergraduate engineering students, to help them to better understand the electrical properties of materials. This system will be displayed at educational outreach activities such as the university open house and summer institutes for high school students, to spark interest in science by the general public and to encourage students to consider careers in technology.
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Intergovernmental Mobility Assignment
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批准号:1943430
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项目类别:Intergovernmental Personnel Award
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资助金额:$29.55万
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财政年份:2019
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负责人:James Edgar
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依托单位:
Hexagonal Boron Nitride Crystal Growth from Solution: A Study of Fundamentals
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批准号:1538127
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项目类别:Standard Grant
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资助金额:$29.73万
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财政年份:2015
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负责人:James Edgar
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依托单位:
I-Corps: Hexagonal Boron Nitride for Electronic Devices
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批准号:1339054
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项目类别:Standard Grant
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资助金额:$5.0万
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财政年份:2013
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负责人:James Edgar
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依托单位:
ARI-MA: Collaborative Research: Hexagonal Boron Nitride Based Neutron Detectors
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批准号:1038890
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项目类别:Standard Grant
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资助金额:$20.81万
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财政年份:2010
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负责人:James Edgar
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依托单位:
MRI: Acquisition of a Field Emission Scanning Electron Microscope for Kansas State University
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批准号:0923499
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项目类别:Standard Grant
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资助金额:$51.89万
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财政年份:2009
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负责人:James Edgar
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依托单位:
ARI-SA: Boron-rich semiconductors for neutron detectors
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批准号:0736154
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项目类别:Standard Grant
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资助金额:$13.46万
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财政年份:2007
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负责人:James Edgar
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依托单位:
Materials World Network: Collaborative Research: An Investigation into the Properties of B12As2, B4C and their Heterostructures
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批准号:0602807
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2006
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负责人:James Edgar
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依托单位:
Collaborative Research: Analysis of Defects and Their Causes in Bulk Aluminum Nitride Crystals
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批准号:0408874
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2004
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负责人:James Edgar
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依托单位:
Synthesis and Characterization of Silicon Carbide - Group III Nitrides Layered Structures and Alloys
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批准号:9627333
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项目类别:Continuing Grant
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资助金额:$25.47万
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财政年份:1996
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负责人:James Edgar
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依托单位:
Improved Silicon Carbide on Silicon Crystal Quality by Epitaxial Necking
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批准号:9319770
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项目类别:Standard Grant
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资助金额:$12.5万
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财政年份:1994
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负责人:James Edgar
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依托单位:
Research Initiation Award: Heteroepitaxial Layered Structures of Aluminum Nitride and Beta Silicon Carbide (REU Supplement)
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批准号:9010061
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项目类别:Standard Grant
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资助金额:$6.19万
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财政年份:1990
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负责人:James Edgar
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依托单位:
Dynamic Mechanical Analysis and Differential Scanning Calorimetry for Measuring Structural and Mechanical Proper- ties, and Phase Transitions in Metals, Polymers & Cerami
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批准号:8952149
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项目类别:Standard Grant
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资助金额:$4.4万
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财政年份:1990
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负责人:James Edgar
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依托单位:
海外基金