MRI: Aquisition of a Hall Effect Measurement System for Characterizing Novel Semiconductors

MRI：获取用于表征新型半导体的霍尔效应测量系统

• 批准号: 0619423
• 负责人: James Edgar
• 金额: $ 15.46万
• 依托单位: Kansas State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-09-01 至 2008-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0619423&HistoricalAwards=false
• 关键词: MRI; Aquisition; Hall; Effect; Measurement

Technical AbstractKansas State University will acquire a Hall effect measurement system for characterizing the electron transport properties of novel semiconductors. This is a highly sensitive system capable of measurements over a wide resistance range (0.05 mW to 200 GW), with a maximum voltage of 95 V, and minimum and maximum currents of 500 fA and 100 mA respectively. The system includes a variable gap electromagnet with a maximum field strength of 1.04 T. Computer controlled variations of the magnetic field and applied voltage makes it possible to distinguish the electrical properties of individual layers in multilayer samples. Many semiconductors with a wide range of applications will be studied including B12As2 -a candidate for radiation detection and direct nuclear to electrical energy conversion devices, heavily doped aluminum nitride for deep ultraviolet LEDs and laser diodes, HgI2 and CdZnTe for solid state radiation sensors, and other semiconductors of emerging importance. The state-of-the-art capabilities and ease of use of this system will help to promote collaborations between students and faculty in different disciplines on campus and between universities. Hall effect measurements will be incorporated into demonstrations and experiments in undergraduate engineering courses to enhance student learning of mobility and charge carrier concentrations, as measured by this widely employed technique. Lay AbstractHall effect measurements are the most common method to determine the electrical properties of a semiconductor, such as electron speed and concentration. These properties must be known to design and fabricate all types of electronic devices such as light emitting diodes (LEDs), laser diodes, and sensors to detect light (from ultraviolet to infrared) and nuclear radiation. Such devices are found in traffic lights, automobiles, laser printers, compact disc players, and environmental and safety monitors, just to cite a few examples. The new Hall effect measurement system will enhance a growing cross-disciplinary program at Kansas State University in sensor development. Characterization provided by this system will lead to better materials and new, more efficient and sensitive sensors. The system will also help with student education; new experiments using this system will be incorporated into the laboratories of undergraduate engineering students, to help them to better understand the electrical properties of materials. This system will be displayed at educational outreach activities such as the university open house and summer institutes for high school students, to spark interest in science by the general public and to encourage students to consider careers in technology.

技术摘要堪萨斯州立大学将获得一个霍尔效应测量系统，用于表征新型半导体的电子传输特性。 这是一个高灵敏度的系统，能够在宽电阻范围（0.05 mW至200 GW）内进行测量，最大电压为95 V，最小和最大电流分别为500 fA和100 mA。 该系统包括一个最大场强为1.04 T的可变间隙电磁铁。 计算机控制的磁场和施加电压的变化使得区分多层样品中各个层的电气特性成为可能。 许多具有广泛应用的半导体将被研究，包括B12 As 2-辐射探测和直接核能到电能转换设备的候选者，深紫外LED和激光二极管的重掺杂氮化铝，用于固态辐射传感器的HgI 2和CdZnTe，以及其他新兴重要的半导体。 该系统的先进功能和易用性将有助于促进校园内不同学科的学生和教师之间以及大学之间的合作。 霍尔效应测量将被纳入本科工程课程的演示和实验中，以提高学生对迁移率和电荷载流子浓度的学习，正如这种广泛使用的技术所测量的那样。 霍尔效应测量是确定半导体电特性的最常用方法，如电子速度和浓度。 这些性质必须是已知的，以设计和制造所有类型的电子设备，如发光二极管（LED），激光二极管和传感器，以检测光（从紫外线到红外线）和核辐射。 仅举几个例子，这种装置可用于交通信号灯、汽车、激光打印机、光盘播放器以及环境和安全监视器。 新的霍尔效应测量系统将增强堪萨斯州立大学在传感器开发方面不断发展的跨学科项目。 该系统提供的特性将导致更好的材料和新的，更有效和灵敏的传感器。 该系统还将有助于学生教育;使用该系统的新实验将被纳入本科工程专业学生的实验室，以帮助他们更好地了解材料的电性能。 该系统将在教育推广活动中展示，如大学开放日和高中生暑期研究所，以激发公众对科学的兴趣，并鼓励学生考虑从事技术职业。