Synthesis and Characterization of Silicon Carbide - Group III Nitrides Layered Structures and Alloys

9627333埃德加本研究项目的目的是对控制外延多层膜和SiC与AlN和GaN结合的合金的多型体和相稳定性的因素的基本理解。将研究具有高结晶完整性、可控成分、多型体和界面质量的SiC/AlN/SiC、（AlN）x（SiC）1-x和（GaN）x（SiC）1-x等层状结构和合金的气相外延。该方法是面向相关的基本化学和工艺条件与外延生长的多层结构或多型体实现。 X射线衍射技术将被用来研究薄膜晶体质量，应变，局部原子配置，和加工条件，衬底材料，取向和成分的多型体的依赖关系。 此外，热力学因素稳定这些结构和合金，和动力学障碍，防止散装稳定形式的分解将进行评估。该研究将为先进的电子/光子材料合成和加工提供技术相关的基础材料科学知识。 此外，从该研究项目中获得的知识和理解预计将通过提供基本理解和设计和加工更先进材料的基础，为提高先进器件和电路的性能做出贡献。 该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。***

9627333 Edgar This research project aims for fundamental understanding of factors controlling the polytypes and phase stability of epitaxial multilayers and alloys of SiC combined with AlN and GaN. Vapor phase epitaxy of layered structures and alloys such as SiC/AlN/SiC, (AlN)x(SiC)1-x and (GaN)x(SiC)1-x of high crystalline perfection, controlled compositions, polytypes, and interfacial quality will be studied. The approach is oriented to relating basic chemical and processing conditions associated with epitaxial growth to the multilayered structures or polytypes realized. X-ray diffraction techniques will be used to study dependence of thin film crystal quality, strain, local atomic configuration, and polytype on the processing conditions, substrate material, orientation, and composition. Additionally, thermodynamic factors stabilizing these structures and alloys, and kinetic barriers preventing decomposition to bulk stable forms will be evaluated. %%% The research will contribute basic materials science knowledge of technological relevance to advanced electronic/photonic materials synthesis and processing. Additionally, the knowledge and understanding gained from this research project is expected to contribute in a general way to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and processing more advanced materials. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***