ARI-MA: Collaborative Research: Hexagonal Boron Nitride Based Neutron Detectors
ARI-MA: Collaborative Research: Hexagonal Boron Nitride Based Neutron Detectors
批准号:
1038890
负责人:
James Edgar
金额:
$20.81万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2010
资助国家:
美国
项目状态:
已结题
起止时间:
2010-09-15 至 2012-08-31
中文摘要
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英文摘要
Collaborative Proposals 1038700 (PI: Hongxing Jiang, Texas Tech University) 1038890 (PI: James Edgar, Kansa State University) ARI-MA: Collaborative Research: Hexagonal Boron Nitride Based Neutron Detectors Fundamental studies on the properties and processing of hexagonal boron nitride (hBN) will be performed to enable the fabrication of nearly ideal solid state thermal neutron detectors. Epitaxial films of this wide band gap semiconductor, prepared by metalorganic chemical vapor deposition, will be intentionally doped to control its electrical and optical properties. High structural quality, bulk hBN crystals will be grown from molten metal solutions, so the impact of extended defects on its properties can be determined. The hBN materials will be prepared with isotopically-enriched boron-10, to take advantage of its high thermal neutron capture cross section to enhance detector sensitivity. Definitive values of the fundamental properties of hBN will be determined by advanced materials characterization techniques. Solid state neutron detectors, including devices employing a novel multiple layer structure that can accommodate short mean free paths of charge carriers, will be fabricated, and their neutron detection ability thoroughly tested. Ultimately, the detectors developed is expected to have a major impact on nuclear threat detection and could lead to a large variety of useful devices, ranging from small disposable detectors to large area monitors, and provide an alternative to helium-3 based detectors. Graduate and undergraduate students from both participating institutions will be actively involved in this highly interdisciplinary research project.
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Intergovernmental Mobility Assignment
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批准号:1943430
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项目类别:Intergovernmental Personnel Award
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资助金额:$29.55万
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财政年份:2019
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负责人:James Edgar
-
依托单位:
Hexagonal Boron Nitride Crystal Growth from Solution: A Study of Fundamentals
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批准号:1538127
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项目类别:Standard Grant
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资助金额:$29.73万
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财政年份:2015
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负责人:James Edgar
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依托单位:
I-Corps: Hexagonal Boron Nitride for Electronic Devices
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批准号:1339054
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项目类别:Standard Grant
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资助金额:$5.0万
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财政年份:2013
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负责人:James Edgar
-
依托单位:
MRI: Acquisition of a Field Emission Scanning Electron Microscope for Kansas State University
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批准号:0923499
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项目类别:Standard Grant
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资助金额:$51.89万
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财政年份:2009
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负责人:James Edgar
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依托单位:
ARI-SA: Boron-rich semiconductors for neutron detectors
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批准号:0736154
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项目类别:Standard Grant
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资助金额:$13.46万
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财政年份:2007
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负责人:James Edgar
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依托单位:
MRI: Aquisition of a Hall Effect Measurement System for Characterizing Novel Semiconductors
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批准号:0619423
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项目类别:Standard Grant
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资助金额:$15.46万
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财政年份:2006
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负责人:James Edgar
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依托单位:
Materials World Network: Collaborative Research: An Investigation into the Properties of B12As2, B4C and their Heterostructures
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批准号:0602807
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2006
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负责人:James Edgar
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依托单位:
Collaborative Research: Analysis of Defects and Their Causes in Bulk Aluminum Nitride Crystals
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批准号:0408874
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2004
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负责人:James Edgar
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依托单位:
Synthesis and Characterization of Silicon Carbide - Group III Nitrides Layered Structures and Alloys
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批准号:9627333
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项目类别:Continuing Grant
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资助金额:$25.47万
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财政年份:1996
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负责人:James Edgar
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依托单位:
Improved Silicon Carbide on Silicon Crystal Quality by Epitaxial Necking
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批准号:9319770
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项目类别:Standard Grant
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资助金额:$12.5万
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财政年份:1994
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负责人:James Edgar
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依托单位:
Research Initiation Award: Heteroepitaxial Layered Structures of Aluminum Nitride and Beta Silicon Carbide (REU Supplement)
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批准号:9010061
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项目类别:Standard Grant
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资助金额:$6.19万
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财政年份:1990
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负责人:James Edgar
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依托单位:
Dynamic Mechanical Analysis and Differential Scanning Calorimetry for Measuring Structural and Mechanical Proper- ties, and Phase Transitions in Metals, Polymers & Cerami
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批准号:8952149
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项目类别:Standard Grant
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资助金额:$4.4万
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财政年份:1990
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负责人:James Edgar
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依托单位:
国内基金
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