Industry Internship: Characterization of Process Parameters for Continuous Czochralski Growth of Silicon Single Crystals

研究领域是材料工程和 制造过程，旨在获得深入的知识， 直拉法晶体生长中的基本物理现象 设备工艺，主要科学和工程 在计算机辅助设计和制造的考虑， 自动化的“一键控制”拉料器，成本考虑， 美国CZ晶体在世界市场上的竞争力 拔出器。 初步研究将在 连续充电直拉法生长单晶硅 晶体 CCZ工艺预计将产生以下晶体： 性能均匀、质量好、成本低。 研究 CCZ过程将包括理论工作，以使 对传统CZ拉晶机进行改造， 实验，并发展流动的基本理解， 熔体中的温度场。 实验以获得关于 坩埚尺寸、熔体高度、功率要求、生长和进料 添加硅料的适当位置， 其他几个有助于开发商业广告的参数 单位将进行调查。

Research is in the area of materials engineering and manufacturing processes aimed at acquiring in-depth knowledge of basic physical phenomena in Czochralski (CZ) crystal growth equipment processes, major scientific and engineering considerations in computer-aided design and manufacturing of an automated "one button control" puller, cost consideration, and United States competitiveness in world market for CZ crystal puller. Preliminary research will be performed on continuously-charged Czochralski (CCZ) growth of silicon single crystals. The CCZ process is expected to produce crystals of uniform properties, better quality and lesser costs. The research on CCZ process will include theoretical work in order to make modifications in the conventional CZ crystal puller for experiments, and develop a basic understanding of flow and temperature fields in the melt. Experiments to obtain data on crucible size, melt height, power requirement, growth and feed rates, appropriate location for addition of silicon charge and several other parameters which help in developing a commercial unit will be investigated.