Industry Internship: Characterization of Process Parameters for Continuous Czochralski Growth of Silicon Single Crystals

行业实习：硅单晶连续直拉生长工艺参数表征

• 批准号: 9015641
• 负责人: Vishwanath Prasad
• 金额: $ 2.31万
• 依托单位: Columbia University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-07-01 至 1991-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9015641&HistoricalAwards=false
• 关键词: Industry; Internship; Characterization; Process; Parameters

Research is in the area of materials engineering and manufacturing processes aimed at acquiring in-depth knowledge of basic physical phenomena in Czochralski (CZ) crystal growth equipment processes, major scientific and engineering considerations in computer-aided design and manufacturing of an automated "one button control" puller, cost consideration, and United States competitiveness in world market for CZ crystal puller. Preliminary research will be performed on continuously-charged Czochralski (CCZ) growth of silicon single crystals. The CCZ process is expected to produce crystals of uniform properties, better quality and lesser costs. The research on CCZ process will include theoretical work in order to make modifications in the conventional CZ crystal puller for experiments, and develop a basic understanding of flow and temperature fields in the melt. Experiments to obtain data on crucible size, melt height, power requirement, growth and feed rates, appropriate location for addition of silicon charge and several other parameters which help in developing a commercial unit will be investigated.

研究领域包括材料工程和制造工艺，目的是深入了解提拉法(CZ)晶体生长设备工艺中的基本物理现象，计算机辅助设计和制造自动“一键控制”拉丝机的主要科学和工程考虑，成本考虑，以及美国CZ拉晶机在世界市场上的竞争力。将对连续带电提拉法(CCZ)生长硅单晶进行初步研究。CCZ工艺有望生产性能均匀、质量更好、成本更低的晶体。CCZ工艺的研究将包括理论工作，以便对传统的CZ拉晶器进行改进以进行实验，并对熔体内的流动和温度场有基本的了解。将进行实验，以获得有关坩埚尺寸、熔体高度、功率需求、生长和进料速度、添加硅的合适位置以及有助于开发商业单元的其他几个参数的数据。