Engineering Research Equipment Grant: Three-Dimensional Video Animation and Imaging for Crystal Growth and Thin Film Research

工程研究设备补助金：用于晶体生长和薄膜研究的三维视频动画和成像

• 批准号: 9310649
• 负责人: Vishwanath Prasad
• 金额: $ 2.8万
• 依托单位: SUNY at Stony Brook
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-07-15 至 1995-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9310649&HistoricalAwards=false
• 关键词: Engineering; Research; Equipment; Grant; Three

9310649 Prasad The equipment will primarily be used for ongoing research on continuous Czochralski (CCZ) crystal growth of silicon single crystals and thin film formation for VLSI/ULSI circuit fabrication. In addition, they may also help in conducting research on liquid encapsulated Czochralski growth of indium phosphide single crystals and in basic melting/solidification research. Computational research and full scale experiments in an industrial crystal puller have demonstrated that the velocity and temperature fields of CCZ growth process are inherently three dimensional and oscillatory except under special circumstances. To understand the physical phenomena underlying the CCZ melt flow and melting of solid pellets when dropped in a rotating pool of melt, and to examine the effect of process parameters on growth conditions, three dimensional visualization and imaging of field variables is necessary. The proposed video photography and image processing equipment, with the help of appropriate software, can perform this task on existing SUN workstations. The video animation of growth processes produced from the computational results, can be used for a theoretical study of the effect of governing parameters as well as for designing new laboratory and industrial experiments. The expanded scope of this research will help in faster development of this CCZ technique for commercial applications. If the crystal growth process can be understood better, it may be possible to grow more perfect crystals at faster rates, resulting in better devices at lower cost.

小行星9310649 该设备将主要用于正在进行的研究连续直拉（CCZ）晶体生长的硅单晶和薄膜形成的超大规模集成电路/超大规模集成电路制造。 此外，它们还可以帮助进行磷化铟单晶的液体封装直拉生长的研究和基本的熔化/固化研究。 计算研究和在工业拉晶机上的全尺寸实验表明，CCZ生长过程的速度场和温度场本质上是三维的，除了在特殊情况下是振荡的。 要了解的物理现象的CCZ熔体流动和熔化的固体颗粒下降时，在一个旋转池的熔体，并检查生长条件的工艺参数的影响，三维可视化和成像的字段变量是必要的。 拟议的视频摄影和图像处理设备在适当软件的帮助下，可以在现有的Sun工作站上执行此任务。 从计算结果产生的生长过程的视频动画，可用于理论研究的控制参数的效果，以及设计新的实验室和工业实验。 这项研究的范围扩大将有助于更快地开发这种CCZ技术的商业应用。 如果能更好地理解晶体生长过程，就有可能以更快的速度生长出更完美的晶体，从而以更低的成本生产出更好的器件。