Synthesis and Characterization of Boron Nitride Masks for X-Ray Lithography

X 射线光刻用氮化硼掩模的合成与表征

• 批准号: 9015942
• 负责人: Roland Levy
• 金额: --
• 依托单位: New Jersey Institute of Technology
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-08-01 至 1992-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9015942&HistoricalAwards=false
• 关键词: Synthesis; Characterization; Boron; Nitride; Masks

The process of producing boron nitride membranes with the required properties will be established. A fundamental understanding of the inter-relationships governing deposition conditions, composition, and film properties will be achieved X-ray masks incorporation the optimal boron nitride membrane properties will be produced and tested for radiation hardness. The effects of accelerated exposure testing on the properties of membranes will be ascertained and issuing technological challenges addressed.

生产硼的过程 氮化膜与所需的 将建立财产。 一 基本理解本 相互关系治理 沉积条件，组成， 和薄膜性能， X射线面罩 最佳氮化硼膜 将生产和 测试辐射硬度。 的 加速照射效应 性能测试 膜将被确定， 提出技术挑战 处理。