Synthesis and Characterization of Boron Nitride Masks for X-Ray Lithography

X 射线光刻用氮化硼掩模的合成与表征

• 批准号: 9114698
• 负责人: Roland Levy
• 金额: --
• 依托单位: New Jersey Institute of Technology
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-08-15 至 1993-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9114698&HistoricalAwards=false
• 关键词: Synthesis; Characterization; Boron; Nitride; Masks

The electrical, optical, and mechanical properties of the boron nitride and silicon carbide films will be investigated prior to and after x-ray synchrotron radiation. The electrical measurement will be conducted on capacitor structures consisting of highly doped (0.0025 -cm) p-type silicon substrates with overlying films of aluminum to serve as the base electrode, the boron nitride dielectric, and aluminum dots evaporated through a metal shadow mask. Only compositions deemed suitable for x-ray membranes will undergo such tests. The dependence of current density on electric field will be examined to determine the prevalent conduction mechanism in the material as well as the influence of radiation dose on the potential change in the electrical behavior.

的电学、光学和机械性能， 氮化硼和碳化硅膜将 在X射线同步加速器之前和之后 辐射 电气测量将是 在电容器结构上进行， 高掺杂（0.0025 -cm）p型硅衬底 其上覆有铝膜， 基极、氮化硼电介质，以及 通过金属阴影蒸发的铝点 面具 只有被认为适用于X射线的组合物 膜将经历这样的测试。 的 电流密度对电场的依赖性将 进行检查，以确定普遍的传导 材料中的机制以及影响 辐射剂量的潜在变化， 电气性能