Synthesis and Characterization of Boron Nitride Masks for X-Ray Lithography

在x射线同步辐射前后，将研究氮化硼和碳化硅薄膜的电学、光学和机械性能。电学测量将在电容器结构上进行，该电容器结构由高掺杂（0.0025 -cm） p型硅衬底与上覆铝薄膜作为基电极，氮化硼介电介质以及通过金属阴影掩膜蒸发的铝点组成。只有被认为适合x射线膜的成分才会进行这种测试。我们将研究电流密度对电场的依赖性，以确定材料中普遍的传导机制以及辐射剂量对电学行为电位变化的影响。

The electrical, optical, and mechanical properties of the boron nitride and silicon carbide films will be investigated prior to and after x-ray synchrotron radiation. The electrical measurement will be conducted on capacitor structures consisting of highly doped (0.0025 -cm) p-type silicon substrates with overlying films of aluminum to serve as the base electrode, the boron nitride dielectric, and aluminum dots evaporated through a metal shadow mask. Only compositions deemed suitable for x-ray membranes will undergo such tests. The dependence of current density on electric field will be examined to determine the prevalent conduction mechanism in the material as well as the influence of radiation dose on the potential change in the electrical behavior.