Diagnostics and Modeling of Transport In Laser and Conventional Chemical Vapor Deposition

激光化学气相沉积(LCVD)是一种快速沉积精细表面结构的无掩模图案化技术。虽然气体动力学同时控制着沉积速率和沉积化学计量，但为常规化学气相沉积(CVD)开发的分析方法不适用于LC VD的快速反应速率。在本研究中，主要的工艺参数及其相互作用将通过实验和理论技术来确定。这些结果将被用于开发预测模型，以应用于更复杂或不太知名的材料系统。

Laser chemical vapor deposition (LCVD) is a technique for maskless patterning of fine surface structures at rapid deposition rates. While gas dynamics control both deposition rate and deposit stoichiometry, the analysis methods developed for conventional chemical vapor deposition (CVD) are not applicable at the fast reaction rates of LCVD. In the present study the primary process parameters in LCVD and their interaction will be determined by experimental and theoretical techniques. The results will be used to develop predictive models for application in more complex or less well known materials systems.