Diagnostics and Modeling of Transport In Laser and Conventional Chemical Vapor Deposition

激光化学气相沉积（LCVD）是一种用于无掩模沉积的技术。 以快速沉积速率形成精细表面结构的图案。 而气体动力学控制沉积速率和存款 化学计量学，分析方法开发的常规 化学气相沉积（CVD）不适用于快速 LCVD反应速率 在本研究中， LCVD中的参数及其相互作用将由 实验和理论技术。 结果将用于 开发预测模型，用于更复杂或 不太熟悉的材料系统。

Laser chemical vapor deposition (LCVD) is a technique for maskless patterning of fine surface structures at rapid deposition rates. While gas dynamics control both deposition rate and deposit stoichiometry, the analysis methods developed for conventional chemical vapor deposition (CVD) are not applicable at the fast reaction rates of LCVD. In the present study the primary process parameters in LCVD and their interaction will be determined by experimental and theoretical techniques. The results will be used to develop predictive models for application in more complex or less well known materials systems.