Electronic Properties and Growth of Thin Film Diamond

薄膜金刚石的电子特性和生长

• 批准号: 9100063
• 负责人: Jerzy Bernholc
• 金额: $ 19.8万
• 依托单位: North Carolina State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-06-15 至 1994-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9100063&HistoricalAwards=false
• 关键词: Electronic; Properties; Growth; Thin; Film

A comprehensive theoretical investigation of the electronic properties and growth of thin film diamond is proposed. It will employ electronic structure and ab-initio molecular dynamics methods to study a) novel growth processes for diamond thin films and b) doping of diamond. The main focus of the growth part will be on mechanism leading to Atomic Layer Epitaxy for diamond and the rate=limiting steps in low pressure CVD growth. The impurities and defect part will concentrate on n type doping and on the possibility of altering the thermodynamic balance between diamond and graphite by an addition of a substantial amount of impurities.

电子学的全面理论研究 金刚石薄膜的性质和生长。 它将 利用电子结构和从头算分子动力学 研究方法a）金刚石薄膜的新生长工艺 和B）金刚石的掺杂。 增长部分的主要重点将是 是导致金刚石原子层外延的机制， 速率=低压CVD生长中的限制步骤。 杂质和 缺陷部分将集中在n型掺杂和 改变金刚石和金刚石之间热力学平衡的可能性 和通过添加大量杂质的石墨。