Development of GaInP/GaAs and A1GaInP/GaAs HEMT, Quantum- Well and MIS/MISFET Structures for High-Frequency and Optoelectronic Device Applications (Research Planning Grant)

开发用于高频和光电器件应用的 GaInP/GaAs 和 A1GaInP/GaAs HEMT、量子阱和 MIS/MISFET 结构（研究计划资助）

• 批准号: 9110697
• 负责人: Jennifer Hwu-Sadwick
• 金额: $ 1.8万
• 依托单位: University of Utah
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-08-15 至 1993-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9110697&HistoricalAwards=false
• 关键词: Development; GaInP; GaAs; A1GaInP; HEMT

Increased interest in the millimeter region has stimulated the development of receiver technology for a wide range of applications including radio astronomy, atmospheric radiometry, plasma diagnostics, millimeter wave imaging, nondestructive testing, radar, and high- density, high-directivity communications and data transmission. To date, most of the flight- qualified production III-V compound semiconductor high-speed electronics have used GaAs- or AlGaAs/GaAs-based devices. Recently high electron mobility (HEMT) and heterojunction bipolar transistor (HBT) systems based on AlGaAs/InGaAs/GaAs, AllnAs/InGaAs, and InGaAs/InP have demonstrated excellent device performance at frequencies far exceeding those possible with the AlGaAs/GaAs system. In this Research Planning Grant award, both two- and three-terminal GaInP/GaAs and AlGaInP/GaAs devices will be fabricated and tested. The material will be grown by organo- metallic vapor phase epitaxy at the University of Utah and complete device characterization (dc to 60 GHz) will be carried out under this research. Device concepts to be implemented in this work will include discrete HEMT, insulated gate field effect transistors, and quantum well devices along with prototype varactor frequency multipliers and converters. After the completion of the planning research, optical control of microwave and millimeter wave devices of GaInP/GaAs and AlGaInP/GaAs heterosystems will also be investigated. The device concepts for high- frequency electronic and optoelectronic circuit applications will then be used for designing and fabricating a monolithic millimeter wave integrated circuit. In addition, two-dimensional array of high frequency devices of GaInP/GaAs and AlGaInP/GaAs will be fabricated to produce high output power (i.e., Watt level) at frequencies in the range of 94 to 147 GHz.

人们对毫米波段的兴趣增加， 刺激了接收器的发展 广泛应用的技术 包括射电天文学、大气 辐射测量，等离子体诊断，毫米波 成像、无损检测、雷达和高- 高密度、高方向性的通信和数据 传输 到目前为止，大部分的飞行- 合格生产Ⅲ-Ⅴ族化合物 半导体高速电子设备已经使用 GaAs或AlGaAs/GaAs基器件。 高电子迁移率（HEMT） 异质结双极晶体管（HBT）系统 基于AlGaAs/InGaAs/GaAs， AlnAs/InGaAs和InGaAs/InP具有 展示了出色的设备性能， 频率远远超过那些可能与 AlGaAs/GaAs系统 在这项研究规划奖，双方 二端和三端GaInP/GaAs， 将制备AlGaInP/GaAs器件， 测试. 该材料将通过有机- 金属汽相外延， 犹他州和完整的器件表征（直流 到60 GHz）将在此 research. 拟实施的设备概念 在这项工作中将包括分立HEMT， 绝缘栅场效应晶体管，以及 量子阱器件沿着原型 变容二极管倍频器和转换器。 规划研究完成后， 微波毫米波光控 GaInP/GaAs波导器件， AlGaInP/GaAs异质结也将在 研究了 高性能的设备概念- 频率电子与光电电路 应用程序将用于设计和 制作单片毫米波 集成电路 此外，二维 GaInP/GaAs高频器件阵列 和AlGaInP/GaAs将被制造成 产生高输出功率（即，瓦级）， 频率范围为94至147 GHz。