RIA: Experimental Study of Coulomb Blockade Devices

RIA：库仑封锁装置的实验研究

• 批准号: 9110980
• 负责人: David Janes
• 金额: $ 7万
• 依托单位: Purdue Research Foundation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-08-01 至 1994-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9110980&HistoricalAwards=false
• 关键词: RIA; Experimental; Study; Coulomb; Blockade

The objectives are to characterize devices employing a single-electron charging effect known as the Coulomb blockade effect and to investigate the potential for applying this effect to the development of novel devices. The first phase of the proposed study will develop devices on semiconductor heterostructures employing two basic configurations and will characterize the conductance modulation and current-voltage characteristics associated with Coulomb blockade effects in the device. The experimental results will be compared with predicted trends in order to validate the predictions and to evaluate the feasibility of proposals for more advanced structures. The second phase of the study will investigate advanced devices based on this effect. Devices based on several proposed configurations will be developed and evaluated. Proposed transistors of this type are expected to offer better gain and speed characteristics than conventional devices and are expected to operate at more reasonable temperatures and voltage levels than those required for mesoscopic structures.

其目的是描述采用库仑阻塞效应的单电子充电效应的器件，并研究将该效应应用于新器件开发的可能性。该研究的第一阶段将在半导体异质结上开发采用两种基本配置的器件，并将表征器件中与库仑阻塞效应相关的电导调制和电流-电压特性。试验结果将与预测的趋势进行比较，以验证预测并评估更先进结构方案的可行性。第二阶段的研究将基于这一效应来研究先进的设备。将开发和评估基于几种建议配置的设备。这种类型的晶体管有望提供比传统器件更好的增益和速度特性，并有望在比介观结构所需的更合理的温度和电压水平下工作。