RIA: Experimental Study of Coulomb Blockade Devices

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The objectives are to characterize devices employing a single-electron charging effect known as the Coulomb blockade effect and to investigate the potential for applying this effect to the development of novel devices. The first phase of the proposed study will develop devices on semiconductor heterostructures employing two basic configurations and will characterize the conductance modulation and current-voltage characteristics associated with Coulomb blockade effects in the device. The experimental results will be compared with predicted trends in order to validate the predictions and to evaluate the feasibility of proposals for more advanced structures. The second phase of the study will investigate advanced devices based on this effect. Devices based on several proposed configurations will be developed and evaluated. Proposed transistors of this type are expected to offer better gain and speed characteristics than conventional devices and are expected to operate at more reasonable temperatures and voltage levels than those required for mesoscopic structures.