NIRT: Molecule/Semiconductor Heterostructure Devices
NIRT:分子/半导体异质结构器件
基本信息
- 批准号:0506802
- 负责人:
- 金额:--
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2005
- 资助国家:美国
- 起止时间:2005-08-15 至 2011-01-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
0506802JanesThis program will develop molecular heterostructures, including metal/molecule/semiconductor structures, develop novel electronic devices based on these structures, and characterize and model the properties of the devices. The use of both molecular and semiconductor states can provide interesting electronic characteristics, and raises possibilities for integrated sensing or memory elements. A well-integrated, interdisciplinary approach incorporating both experimental and modeling thrusts will be employed. This collaborative program includes participants from Purdue University, Northwestern University and Washington University at St. Louis. The program will develop an inventory of molecular layers on silicon with known chemical and electronic properties and investigate potential electronic device and sensing applications. The proposed approach is novel in terms of both the electronic properties and structural stability that can be achieved via covalent bonds to semiconductor surfaces.The broader impact of the proposed work includes the development of novel approaches for molecular-scale memory, switching and integrated sensing devices suitable for integration with existing silicon microelectronics technology. The participants will pursue several initiatives in formal and experiential informal education and professional development. The initiatives include development and dissemination of course modules on nanotechnology, including modules suitable for high school and undergraduate students. Research and education partnerships will be developed with several universities which serve underrepresented groups and with corporate laboratories. The integrated educational and professional development initiatives will expose undergraduate and graduate students at the participating universities to new interdisciplinary approaches, provide opportunities for students and faculty from partner universities, and enrich the educational experiences for students at other universities through web-based initiatives.
0506802Janesthis程序将开发分子异质结构,包括金属/分子/半导体结构,基于这些结构开发新型的电子设备,并表征和建模设备的性质。分子和半导体状态的使用可以提供有趣的电子特性,并增加了综合感测或记忆元素的可能性。将采用一种融合实验性和建模推力的良好整合,跨学科的方法。该合作计划包括普渡大学,西北大学和圣路易斯华盛顿大学的参与者。该程序将通过已知的化学和电子特性在硅上开发分子层的清单,并研究潜在的电子设备和传感应用。所提出的方法在电子特性和结构稳定性方面都是新颖的,可以通过与半导体表面的共价键实现。拟议工作的更广泛的影响包括开发新的分子尺度记忆方法,切换和集成感应设备,适合于现有的硅硅微电动技术集成。参与者将在正规和体验式非正式教育和专业发展中遵循几项举措。这些举措包括开发和传播纳米技术的课程模块,包括适合高中和本科生的模块。研究和教育合作伙伴关系将与几所大学提供代表性不足的群体和公司实验室的大学建立。综合的教育和专业发展计划将使参与大学的本科生和研究生揭露新的跨学科方法,为合作伙伴大学的学生和教师提供机会,并通过基于网络的倡议来丰富其他大学的学生的教育经验。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
数据更新时间:{{ journalArticles.updateTime }}
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
数据更新时间:{{ journalArticles.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ monograph.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ sciAawards.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ conferencePapers.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ patent.updateTime }}
David Janes其他文献
David Janes的其他文献
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
{{ truncateString('David Janes', 18)}}的其他基金
IUCRC Planning Grant Purdue University: Center for Interface Sciences for Emerging Devices & Systems (CISEDS)
IUCRC 规划资助普渡大学:新兴设备接口科学中心
- 批准号:
2209853 - 财政年份:2022
- 资助金额:
-- - 项目类别:
Standard Grant
Low-Resistance Transparent Conductors Based on Co-Percolation in Hybrid Graphene/Nanowire Films
基于混合石墨烯/纳米线薄膜共渗透的低电阻透明导体
- 批准号:
1408346 - 财政年份:2014
- 资助金额:
-- - 项目类别:
Standard Grant
Thin-Film Transistors for Flexible Displays and RFID Applications
用于柔性显示器和 RFID 应用的薄膜晶体管
- 批准号:
1202281 - 财政年份:2012
- 资助金额:
-- - 项目类别:
Standard Grant
EAGER:Exploring Core-Shell Nanowire Structures for Low-Noise Transistors
EAGER:探索低噪声晶体管的核壳纳米线结构
- 批准号:
1118934 - 财政年份:2011
- 资助金额:
-- - 项目类别:
Standard Grant
Student Travel Support for 2003 IEEE Nanotechnology Conference: August 12-14, 2003 San Francisco, CA.
2003 年 IEEE 纳米技术会议学生旅行支持:2003 年 8 月 12 日至 14 日,加利福尼亚州旧金山。
- 批准号:
0320101 - 财政年份:2003
- 资助金额:
-- - 项目类别:
Standard Grant
NER: Investigation of Electronic Transport in Carbon Nanotubes Using an Ultrafast Photoconduction Technique
NER:使用超快光电导技术研究碳纳米管中的电子传输
- 批准号:
0103227 - 财政年份:2001
- 资助金额:
-- - 项目类别:
Standard Grant
RIA: Experimental Study of Coulomb Blockade Devices
RIA:库仑封锁装置的实验研究
- 批准号:
9110980 - 财政年份:1991
- 资助金额:
-- - 项目类别:
Standard Grant
相似国自然基金
PDMS基超薄疏水分子筛修饰的高选择性半导体气体传感器研究
- 批准号:62374166
- 批准年份:2023
- 资助金额:55 万元
- 项目类别:面上项目
仿生分子催化剂/半导体复合体系光电催化全分解水的研究
- 批准号:22372001
- 批准年份:2023
- 资助金额:50 万元
- 项目类别:面上项目
醌式吡嗪衍生半导体分子构建及柔性电化学晶体管应用研究
- 批准号:52303234
- 批准年份:2023
- 资助金额:30 万元
- 项目类别:青年科学基金项目
分子筛限域构筑中空多级结构黄铜矿半导体及近红外光催化CO2还原性能研究
- 批准号:22301099
- 批准年份:2023
- 资助金额:30 万元
- 项目类别:青年科学基金项目
具有室温磁性二维有机半导体的分子设计及电场调控理论研究
- 批准号:22303092
- 批准年份:2023
- 资助金额:30 万元
- 项目类别:青年科学基金项目
相似海外基金
Clarification of Grinding Mechanism of Next Generation Semiconductor Substrates for Minimizing the Damaged Layers Using Nanomachining and Metrology
利用纳米加工和计量学阐明下一代半导体衬底的研磨机制,以最大限度地减少损坏层
- 批准号:
23H01311 - 财政年份:2023
- 资助金额:
-- - 项目类别:
Grant-in-Aid for Scientific Research (B)
Quantum dot formation by electron beam irradiation and application to yellow semiconductor laser
电子束照射形成量子点及其在黄色半导体激光器中的应用
- 批准号:
23H01455 - 财政年份:2023
- 资助金额:
-- - 项目类别:
Grant-in-Aid for Scientific Research (B)
Observation of hole-dynamics in p-type organic semiconductor films by time-resolved photoelectron spectroscopy
通过时间分辨光电子能谱观察p型有机半导体薄膜中的空穴动力学
- 批准号:
23H01939 - 财政年份:2023
- 资助金额:
-- - 项目类别:
Grant-in-Aid for Scientific Research (B)
Electronic physical properties analysis and crystal defect distribution of electrode interfaces on wide-gap semiconductor at high temperatures by Raman spectroscopy
拉曼光谱高温下宽禁带半导体电极界面电子物理性质分析及晶体缺陷分布
- 批准号:
23K04607 - 财政年份:2023
- 资助金额:
-- - 项目类别:
Grant-in-Aid for Scientific Research (C)
Understanding and control of structure and electronic state of thin film of highly ordered organic semiconductor molecule via photoelectron-imaging
通过光电子成像了解和控制高度有序有机半导体分子薄膜的结构和电子状态
- 批准号:
20K15176 - 财政年份:2022
- 资助金额:
-- - 项目类别:
Grant-in-Aid for Early-Career Scientists