NIRT: Molecule/Semiconductor Heterostructure Devices
NIRT:分子/半导体异质结构器件
基本信息
- 批准号:0506802
- 负责人:
- 金额:--
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2005
- 资助国家:美国
- 起止时间:2005-08-15 至 2011-01-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
0506802JanesThis program will develop molecular heterostructures, including metal/molecule/semiconductor structures, develop novel electronic devices based on these structures, and characterize and model the properties of the devices. The use of both molecular and semiconductor states can provide interesting electronic characteristics, and raises possibilities for integrated sensing or memory elements. A well-integrated, interdisciplinary approach incorporating both experimental and modeling thrusts will be employed. This collaborative program includes participants from Purdue University, Northwestern University and Washington University at St. Louis. The program will develop an inventory of molecular layers on silicon with known chemical and electronic properties and investigate potential electronic device and sensing applications. The proposed approach is novel in terms of both the electronic properties and structural stability that can be achieved via covalent bonds to semiconductor surfaces.The broader impact of the proposed work includes the development of novel approaches for molecular-scale memory, switching and integrated sensing devices suitable for integration with existing silicon microelectronics technology. The participants will pursue several initiatives in formal and experiential informal education and professional development. The initiatives include development and dissemination of course modules on nanotechnology, including modules suitable for high school and undergraduate students. Research and education partnerships will be developed with several universities which serve underrepresented groups and with corporate laboratories. The integrated educational and professional development initiatives will expose undergraduate and graduate students at the participating universities to new interdisciplinary approaches, provide opportunities for students and faculty from partner universities, and enrich the educational experiences for students at other universities through web-based initiatives.
0506802 JanesThis计划将开发分子异质结构,包括金属/分子/半导体结构,开发基于这些结构的新型电子器件,并对器件的特性进行表征和建模。分子和半导体状态的使用可以提供有趣的电子特性,并提高集成传感或存储元件的可能性。一个良好的综合性,跨学科的方法,结合实验和建模推力将被采用。这项合作计划包括来自普渡大学、西北大学和圣路易斯华盛顿大学的参与者。该计划将开发具有已知化学和电子特性的硅分子层清单,并研究潜在的电子器件和传感应用。所提出的方法是新颖的电子性能和结构的稳定性,可以通过共价键到半导体surfaces.The更广泛的影响,所提出的工作包括分子规模的存储器,开关和集成传感器件适合与现有的硅微电子技术集成的新方法的发展。参与者将在正式和体验式非正式教育和专业发展方面采取若干举措。这些举措包括制定和传播纳米技术课程单元,包括适合高中和大学生的单元。将与为代表性不足的群体服务的几所大学和公司实验室建立研究和教育伙伴关系。综合教育和专业发展举措将使参与大学的本科生和研究生接触新的跨学科方法,为伙伴大学的学生和教师提供机会,并通过网络举措丰富其他大学学生的教育经验。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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David Janes其他文献
Rectifying current behaviours
纠正当前行为
- DOI:
10.1038/nchem.429 - 发表时间:
2009-11-01 - 期刊:
- 影响因子:20.200
- 作者:
David Janes - 通讯作者:
David Janes
David Janes的其他文献
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{{ truncateString('David Janes', 18)}}的其他基金
IUCRC Planning Grant Purdue University: Center for Interface Sciences for Emerging Devices & Systems (CISEDS)
IUCRC 规划资助普渡大学:新兴设备接口科学中心
- 批准号:
2209853 - 财政年份:2022
- 资助金额:
-- - 项目类别:
Standard Grant
Low-Resistance Transparent Conductors Based on Co-Percolation in Hybrid Graphene/Nanowire Films
基于混合石墨烯/纳米线薄膜共渗透的低电阻透明导体
- 批准号:
1408346 - 财政年份:2014
- 资助金额:
-- - 项目类别:
Standard Grant
Thin-Film Transistors for Flexible Displays and RFID Applications
用于柔性显示器和 RFID 应用的薄膜晶体管
- 批准号:
1202281 - 财政年份:2012
- 资助金额:
-- - 项目类别:
Standard Grant
EAGER:Exploring Core-Shell Nanowire Structures for Low-Noise Transistors
EAGER:探索低噪声晶体管的核壳纳米线结构
- 批准号:
1118934 - 财政年份:2011
- 资助金额:
-- - 项目类别:
Standard Grant
Student Travel Support for 2003 IEEE Nanotechnology Conference: August 12-14, 2003 San Francisco, CA.
2003 年 IEEE 纳米技术会议学生旅行支持:2003 年 8 月 12 日至 14 日,加利福尼亚州旧金山。
- 批准号:
0320101 - 财政年份:2003
- 资助金额:
-- - 项目类别:
Standard Grant
NER: Investigation of Electronic Transport in Carbon Nanotubes Using an Ultrafast Photoconduction Technique
NER:使用超快光电导技术研究碳纳米管中的电子传输
- 批准号:
0103227 - 财政年份:2001
- 资助金额:
-- - 项目类别:
Standard Grant
RIA: Experimental Study of Coulomb Blockade Devices
RIA:库仑封锁装置的实验研究
- 批准号:
9110980 - 财政年份:1991
- 资助金额:
-- - 项目类别:
Standard Grant
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