IUCRC Planning Grant Purdue University: Center for Interface Sciences for Emerging Devices & Systems (CISEDS)
IUCRC 规划资助普渡大学:新兴设备接口科学中心
基本信息
- 批准号:2209853
- 负责人:
- 金额:$ 2万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2022
- 资助国家:美国
- 起止时间:2022-07-01 至 2024-03-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Semiconductor technology is highly globalized, and its future relies on innovations in materials and their applications in novel device structures. Interfaces between different parts of semiconductor devices are of paramount importance in micro-, nano-, and optoelectronics devices and heterogeneous systems. Therefore, fundamental and applied research on semiconductor interfaces is critical for emerging technologies that impact a wide range of industrial sectors. This award supports the planning phase of the proposed Center for Interface Sciences for Emerging Devices & Systems (CISEDS), which is composed of North Carolina State University and Purdue University. The mission of CISEDS is to produce fundamental science to address electrical and thermal interface challenges of upcoming devices in virtually all sectors of the semiconductor industry, including low and high-power electronics, power transmission, communications, energy, and medicine. The industry is well aware that unresolved or undiscovered challenges related to interfaces can significantly limit achievable device performance and reliability. The Center aims to work with various industries to identify and address key interface challenges that limit the performance or lifetime of the devices. The research that will be conducted under CISEDS has the potential for high economic and societal impact and will provide a robust educational framework to train next-generation U.S. graduate students for the industry. The Center will endeavor to broaden the participation of underserved and underrepresented student groups by leveraging the existing relationships and actively building new ones with local minority-serving institutions and organizations on the local campuses.There has been significant progress in semiconductor materials, devices, and manufacturing over the last couple of decades. These advances were often made possible by inserting new materials into mature device structures. The semiconductor industry learned that to achieve the desired performance and device reliability, it is critically important to understand the scientific challenges in interfacing these new materials with those currently used in existing devices (e.g., metals, insulators, and other semiconductors). Quite often, such interfaces share similar science. As such, four thrust areas were selected as an initial research focus for the proposed Center: 1) Energy Conversion Devices, 2) Flexible/Stretchable Electronics, 3) Si & (Ultra) Wide Bandgap (WBG) Materials & Devices, and 4) 2D Materials & Devices. The fundamental science governing the interfaces, and the critical impact of interfaces on semiconductor device performance, are the backbone of the Center. The fundamental work on interfaces will enable advances within a given material/device technology as well as integration of various material systems into multifunctional components.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
半导体技术高度全球化,其未来依赖于材料创新及其在新型器件结构中的应用。半导体器件不同部分之间的接口在微米、纳米和光电子器件以及异构系统中至关重要。因此,半导体接口的基础和应用研究对于影响广泛工业领域的新兴技术至关重要。该奖项支持拟议的新兴设备与系统接口科学中心 (CISEDS) 的规划阶段,该中心由北卡罗来纳州立大学和普渡大学组成。 CISEDS 的使命是提供基础科学,以解决半导体行业几乎所有领域即将推出的器件的电气和热界面挑战,包括低功率和高功率电子、电力传输、通信、能源和医药。业界清楚地意识到,与接口相关的未解决或未发现的挑战可能会严重限制可实现的设备性能和可靠性。该中心旨在与各行业合作,识别并解决限制设备性能或使用寿命的关键接口挑战。将在 CISEDS 下进行的研究具有产生巨大经济和社会影响的潜力,并将提供一个强大的教育框架来培训该行业的下一代美国研究生。该中心将通过利用现有的关系,并积极与当地校园内的少数族裔服务机构和组织建立新的关系,努力扩大服务不足和代表性不足的学生群体的参与。过去几十年来,半导体材料、器件和制造领域取得了重大进展。这些进步通常是通过将新材料插入成熟的设备结构中来实现的。半导体行业认识到,为了实现所需的性能和器件可靠性,了解将这些新材料与现有器件中当前使用的材料(例如金属、绝缘体和其他半导体)连接的科学挑战至关重要。通常,此类界面具有相似的科学原理。因此,选定了四个重点领域作为拟建中心的初步研究重点:1) 能量转换器件,2) 柔性/可拉伸电子器件,3) 硅和(超)宽带隙 (WBG) 材料与器件,以及 4) 2D 材料与器件。控制接口的基础科学以及接口对半导体器件性能的关键影响是该中心的支柱。接口方面的基础工作将推动给定材料/设备技术的进步,以及将各种材料系统集成到多功能组件中。该奖项反映了 NSF 的法定使命,并通过使用基金会的智力价值和更广泛的影响审查标准进行评估,被认为值得支持。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
数据更新时间:{{ journalArticles.updateTime }}
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
数据更新时间:{{ journalArticles.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ monograph.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ sciAawards.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ conferencePapers.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ patent.updateTime }}
David Janes其他文献
Rectifying current behaviours
纠正当前行为
- DOI:
10.1038/nchem.429 - 发表时间:
2009-11-01 - 期刊:
- 影响因子:20.200
- 作者:
David Janes - 通讯作者:
David Janes
David Janes的其他文献
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
{{ truncateString('David Janes', 18)}}的其他基金
Low-Resistance Transparent Conductors Based on Co-Percolation in Hybrid Graphene/Nanowire Films
基于混合石墨烯/纳米线薄膜共渗透的低电阻透明导体
- 批准号:
1408346 - 财政年份:2014
- 资助金额:
$ 2万 - 项目类别:
Standard Grant
Thin-Film Transistors for Flexible Displays and RFID Applications
用于柔性显示器和 RFID 应用的薄膜晶体管
- 批准号:
1202281 - 财政年份:2012
- 资助金额:
$ 2万 - 项目类别:
Standard Grant
EAGER:Exploring Core-Shell Nanowire Structures for Low-Noise Transistors
EAGER:探索低噪声晶体管的核壳纳米线结构
- 批准号:
1118934 - 财政年份:2011
- 资助金额:
$ 2万 - 项目类别:
Standard Grant
NIRT: Molecule/Semiconductor Heterostructure Devices
NIRT:分子/半导体异质结构器件
- 批准号:
0506802 - 财政年份:2005
- 资助金额:
$ 2万 - 项目类别:
Standard Grant
Student Travel Support for 2003 IEEE Nanotechnology Conference: August 12-14, 2003 San Francisco, CA.
2003 年 IEEE 纳米技术会议学生旅行支持:2003 年 8 月 12 日至 14 日,加利福尼亚州旧金山。
- 批准号:
0320101 - 财政年份:2003
- 资助金额:
$ 2万 - 项目类别:
Standard Grant
NER: Investigation of Electronic Transport in Carbon Nanotubes Using an Ultrafast Photoconduction Technique
NER:使用超快光电导技术研究碳纳米管中的电子传输
- 批准号:
0103227 - 财政年份:2001
- 资助金额:
$ 2万 - 项目类别:
Standard Grant
RIA: Experimental Study of Coulomb Blockade Devices
RIA:库仑封锁装置的实验研究
- 批准号:
9110980 - 财政年份:1991
- 资助金额:
$ 2万 - 项目类别:
Standard Grant
相似海外基金
IUCRC Planning Grant Duke University: Center for Innovation in Risk-analysis for Climate Adaptation and Decision-making (CIRCAD)
IUCRC 规划资助 杜克大学:气候适应和决策风险分析创新中心 (CIRCAD)
- 批准号:
2413267 - 财政年份:2024
- 资助金额:
$ 2万 - 项目类别:
Standard Grant
IUCRC Planning Grant Purdue University: Center for Visual Structural Expertise for Resilience C-ViSER
IUCRC 规划拨款 普渡大学:复原力视觉结构专业知识中心 C-ViSER
- 批准号:
2310930 - 财政年份:2024
- 资助金额:
$ 2万 - 项目类别:
Standard Grant
IUCRC Planning Grant University of Houston: Center for Visual Structural Expertise for Resilience (C-ViSER)
IUCRC 规划拨款 休斯顿大学:复原力视觉结构专业知识中心 (C-ViSER)
- 批准号:
2311019 - 财政年份:2024
- 资助金额:
$ 2万 - 项目类别:
Standard Grant
IUCRC Planning Grant The University of Alabama: Center to Accelerate Recipe Development for Additive Manufacturing of Metals (CARDAMOM)
IUCRC 规划拨款阿拉巴马大学:加速金属增材制造配方开发中心 (CARDAMOM)
- 批准号:
2333363 - 财政年份:2024
- 资助金额:
$ 2万 - 项目类别:
Standard Grant
IUCRC Planning Grant University of Georgia: Center for Innovation in Risk-analysis for Climate Adaptation and Decision-making (CIRCAD)
IUCRC 规划拨款 佐治亚大学:气候适应和决策风险分析创新中心 (CIRCAD)
- 批准号:
2413384 - 财政年份:2024
- 资助金额:
$ 2万 - 项目类别:
Standard Grant
IUCRC Planning Grant University of Texas Rio Grande Valley: Center to Accelerate Recipe Development for Additive Manufacturing of Metals (CARDAMOM)
IUCRC 规划拨款德克萨斯大学里奥格兰德河谷:加速金属增材制造配方开发中心 (CARDAMOM)
- 批准号:
2333362 - 财政年份:2024
- 资助金额:
$ 2万 - 项目类别:
Standard Grant
IUCRC Planning Grant University of Nebraska-Lincoln: Center to Accelerate Recipe Development for Additive Manufacturing of Metals (CARDAMOM)
IUCRC 规划拨款内布拉斯加大学林肯分校:加速金属增材制造配方开发中心 (CARDAMOM)
- 批准号:
2333364 - 财政年份:2024
- 资助金额:
$ 2万 - 项目类别:
Standard Grant
IUCRC Planning Grant University of Michigan: Center for Digital Twins for Consolidated Manufacturing Intelligence (DTCMI)
IUCRC 规划拨款密歇根大学:整合制造智能数字孪生中心 (DTCMI)
- 批准号:
2317070 - 财政年份:2023
- 资助金额:
$ 2万 - 项目类别:
Standard Grant
IUCRC Planning Grant New Mexico State University: Center for Aviation Big Data Analytics [ABDA]
IUCRC 规划拨款 新墨西哥州立大学:航空大数据分析中心 [ABDA]
- 批准号:
2231654 - 财政年份:2023
- 资助金额:
$ 2万 - 项目类别:
Standard Grant
IUCRC Planning Grant University of Southern California: Center for CO2 Storage Modeling, Analytics, and Risk Reduction Technologies (CO2-Smart)
IUCRC 规划拨款南加州大学:二氧化碳封存建模、分析和风险降低技术中心 (CO2-Smart)
- 批准号:
2231665 - 财政年份:2023
- 资助金额:
$ 2万 - 项目类别:
Standard Grant