IUCRC Planning Grant Purdue University: Center for Interface Sciences for Emerging Devices & Systems (CISEDS)

IUCRC 规划资助普渡大学：新兴设备接口科学中心

• 批准号: 2209853
• 负责人: David Janes
• 金额: $ 2万
• 依托单位: Purdue University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2022
• 资助国家: 美国
• 起止时间: 2022-07-01 至 2024-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2209853&HistoricalAwards=false
• 关键词: IUCRC; Planning; Grant; Purdue; University

Semiconductor technology is highly globalized, and its future relies on innovations in materials and their applications in novel device structures. Interfaces between different parts of semiconductor devices are of paramount importance in micro-, nano-, and optoelectronics devices and heterogeneous systems. Therefore, fundamental and applied research on semiconductor interfaces is critical for emerging technologies that impact a wide range of industrial sectors. This award supports the planning phase of the proposed Center for Interface Sciences for Emerging Devices & Systems (CISEDS), which is composed of North Carolina State University and Purdue University. The mission of CISEDS is to produce fundamental science to address electrical and thermal interface challenges of upcoming devices in virtually all sectors of the semiconductor industry, including low and high-power electronics, power transmission, communications, energy, and medicine. The industry is well aware that unresolved or undiscovered challenges related to interfaces can significantly limit achievable device performance and reliability. The Center aims to work with various industries to identify and address key interface challenges that limit the performance or lifetime of the devices. The research that will be conducted under CISEDS has the potential for high economic and societal impact and will provide a robust educational framework to train next-generation U.S. graduate students for the industry. The Center will endeavor to broaden the participation of underserved and underrepresented student groups by leveraging the existing relationships and actively building new ones with local minority-serving institutions and organizations on the local campuses.There has been significant progress in semiconductor materials, devices, and manufacturing over the last couple of decades. These advances were often made possible by inserting new materials into mature device structures. The semiconductor industry learned that to achieve the desired performance and device reliability, it is critically important to understand the scientific challenges in interfacing these new materials with those currently used in existing devices (e.g., metals, insulators, and other semiconductors). Quite often, such interfaces share similar science. As such, four thrust areas were selected as an initial research focus for the proposed Center: 1) Energy Conversion Devices, 2) Flexible/Stretchable Electronics, 3) Si & (Ultra) Wide Bandgap (WBG) Materials & Devices, and 4) 2D Materials & Devices. The fundamental science governing the interfaces, and the critical impact of interfaces on semiconductor device performance, are the backbone of the Center. The fundamental work on interfaces will enable advances within a given material/device technology as well as integration of various material systems into multifunctional components.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

半导体技术高度全球化，其未来依赖于材料创新及其在新型器件结构中的应用。半导体器件不同部分之间的接口在微米、纳米和光电子器件以及异构系统中至关重要。因此，半导体接口的基础和应用研究对于影响广泛工业领域的新兴技术至关重要。该奖项支持拟议的新兴设备与系统接口科学中心 (CISEDS) 的规划阶段，该中心由北卡罗来纳州立大学和普渡大学组成。 CISEDS 的使命是提供基础科学，以解决半导体行业几乎所有领域即将推出的器件的电气和热界面挑战，包括低功率和高功率电子、电力传输、通信、能源和医药。业界清楚地意识到，与接口相关的未解决或未发现的挑战可能会严重限制可实现的设备性能和可靠性。该中心旨在与各行业合作，识别并解决限制设备性能或使用寿命的关键接口挑战。将在 CISEDS 下进行的研究具有产生巨大经济和社会影响的潜力，并将提供一个强大的教育框架来培训该行业的下一代美国研究生。该中心将通过利用现有的关系，并积极与当地校园内的少数族裔服务机构和组织建立新的关系，努力扩大服务不足和代表性不足的学生群体的参与。过去几十年来，半导体材料、器件和制造领域取得了重大进展。这些进步通常是通过将新材料插入成熟的设备结构中来实现的。半导体行业认识到，为了实现所需的性能和器件可靠性，了解将这些新材料与现有器件中当前使用的材料（例如金属、绝缘体和其他半导体）连接的科学挑战至关重要。通常，此类界面具有相似的科学原理。因此，选定了四个重点领域作为拟建中心的初步研究重点：1) 能量转换器件，2) 柔性/可拉伸电子器件，3) 硅和（超）宽带隙 (WBG) 材料与器件，以及 4) 2D 材料与器件。控制接口的基础科学以及接口对半导体器件性能的关键影响是该中心的支柱。接口方面的基础工作将推动给定材料/设备技术的进步，以及将各种材料系统集成到多功能组件中。该奖项反映了 NSF 的法定使命，并通过使用基金会的智力价值和更广泛的影响审查标准进行评估，被认为值得支持。