IUCRC Planning Grant Purdue University: Center for Interface Sciences for Emerging Devices & Systems (CISEDS)
IUCRC 规划资助普渡大学:新兴设备接口科学中心
基本信息
- 批准号:2209853
- 负责人:
- 金额:$ 2万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2022
- 资助国家:美国
- 起止时间:2022-07-01 至 2024-03-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Semiconductor technology is highly globalized, and its future relies on innovations in materials and their applications in novel device structures. Interfaces between different parts of semiconductor devices are of paramount importance in micro-, nano-, and optoelectronics devices and heterogeneous systems. Therefore, fundamental and applied research on semiconductor interfaces is critical for emerging technologies that impact a wide range of industrial sectors. This award supports the planning phase of the proposed Center for Interface Sciences for Emerging Devices & Systems (CISEDS), which is composed of North Carolina State University and Purdue University. The mission of CISEDS is to produce fundamental science to address electrical and thermal interface challenges of upcoming devices in virtually all sectors of the semiconductor industry, including low and high-power electronics, power transmission, communications, energy, and medicine. The industry is well aware that unresolved or undiscovered challenges related to interfaces can significantly limit achievable device performance and reliability. The Center aims to work with various industries to identify and address key interface challenges that limit the performance or lifetime of the devices. The research that will be conducted under CISEDS has the potential for high economic and societal impact and will provide a robust educational framework to train next-generation U.S. graduate students for the industry. The Center will endeavor to broaden the participation of underserved and underrepresented student groups by leveraging the existing relationships and actively building new ones with local minority-serving institutions and organizations on the local campuses.There has been significant progress in semiconductor materials, devices, and manufacturing over the last couple of decades. These advances were often made possible by inserting new materials into mature device structures. The semiconductor industry learned that to achieve the desired performance and device reliability, it is critically important to understand the scientific challenges in interfacing these new materials with those currently used in existing devices (e.g., metals, insulators, and other semiconductors). Quite often, such interfaces share similar science. As such, four thrust areas were selected as an initial research focus for the proposed Center: 1) Energy Conversion Devices, 2) Flexible/Stretchable Electronics, 3) Si & (Ultra) Wide Bandgap (WBG) Materials & Devices, and 4) 2D Materials & Devices. The fundamental science governing the interfaces, and the critical impact of interfaces on semiconductor device performance, are the backbone of the Center. The fundamental work on interfaces will enable advances within a given material/device technology as well as integration of various material systems into multifunctional components.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
半导体技术是高度全球化的,其未来依赖于材料的创新及其在新型设备结构中的应用。半导体设备不同部分之间的接口在微型,纳米和光电设备以及异质系统中至关重要。因此,对半导体界面的基本和应用研究对于影响广泛工业部门的新兴技术至关重要。该奖项支持由北卡罗来纳州立大学和普渡大学组成的新兴设备和系统界面科学中心的计划阶段。 CISEDS的任务是生产基础科学,以应对几乎在半导体行业的所有领域中的电气和热接口挑战,包括低功率电子设备,电力传输,通信,能源和医学。该行业非常意识到,与接口有关的未解决或未发现的挑战可以显着限制可实现的设备性能和可靠性。该中心旨在与各个行业合作,以识别和应对限制设备性能或寿命的关键接口挑战。将在CISEDS下进行的研究有可能产生高经济和社会影响,并将为培训该行业的下一代美国研究生提供强大的教育框架。该中心将努力通过利用现有关系并积极建立与当地少数族裔的机构和组织在当地校园内积极建立新的关系来扩大服务不足和代表性不足的学生团体的参与。在过去的几十年中,半导体材料,设备和制造业取得了重大进展。这些进步通常是通过将新材料插入成熟的设备结构而成为可能的。半导体行业了解到,要实现所需的性能和设备的可靠性,了解将这些新材料与当前在现有设备(例如金属,绝缘体和其他半导体)中相连的科学挑战至关重要。这些界面经常共享相似的科学。因此,选择了四个推力区域作为提议中心的初步研究重点:1)能量转换设备,2)柔性/可拉伸电子设备,3)Si&(Ultra)宽带盖(WBG)材料和设备以及4)2D材料和设备。管理界面的基本科学以及界面对半导体设备性能的关键影响是该中心的骨干。界面上的基本工作将使给定的材料/设备技术以及将各种材料系统整合到多功能组件中的进步。该奖项反映了NSF的法定任务,并认为值得通过基金会的智力优点和更广泛的影响评估来通过评估来获得支持。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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David Janes其他文献
David Janes的其他文献
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{{ truncateString('David Janes', 18)}}的其他基金
Low-Resistance Transparent Conductors Based on Co-Percolation in Hybrid Graphene/Nanowire Films
基于混合石墨烯/纳米线薄膜共渗透的低电阻透明导体
- 批准号:
1408346 - 财政年份:2014
- 资助金额:
$ 2万 - 项目类别:
Standard Grant
Thin-Film Transistors for Flexible Displays and RFID Applications
用于柔性显示器和 RFID 应用的薄膜晶体管
- 批准号:
1202281 - 财政年份:2012
- 资助金额:
$ 2万 - 项目类别:
Standard Grant
EAGER:Exploring Core-Shell Nanowire Structures for Low-Noise Transistors
EAGER:探索低噪声晶体管的核壳纳米线结构
- 批准号:
1118934 - 财政年份:2011
- 资助金额:
$ 2万 - 项目类别:
Standard Grant
NIRT: Molecule/Semiconductor Heterostructure Devices
NIRT:分子/半导体异质结构器件
- 批准号:
0506802 - 财政年份:2005
- 资助金额:
$ 2万 - 项目类别:
Standard Grant
Student Travel Support for 2003 IEEE Nanotechnology Conference: August 12-14, 2003 San Francisco, CA.
2003 年 IEEE 纳米技术会议学生旅行支持:2003 年 8 月 12 日至 14 日,加利福尼亚州旧金山。
- 批准号:
0320101 - 财政年份:2003
- 资助金额:
$ 2万 - 项目类别:
Standard Grant
NER: Investigation of Electronic Transport in Carbon Nanotubes Using an Ultrafast Photoconduction Technique
NER:使用超快光电导技术研究碳纳米管中的电子传输
- 批准号:
0103227 - 财政年份:2001
- 资助金额:
$ 2万 - 项目类别:
Standard Grant
RIA: Experimental Study of Coulomb Blockade Devices
RIA:库仑封锁装置的实验研究
- 批准号:
9110980 - 财政年份:1991
- 资助金额:
$ 2万 - 项目类别:
Standard Grant
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