Thin-Film Transistors for Flexible Displays and RFID Applications

用于柔性显示器和 RFID 应用的薄膜晶体管

基本信息

  • 批准号:
    1202281
  • 负责人:
  • 金额:
    $ 35.97万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2012
  • 资助国家:
    美国
  • 起止时间:
    2012-05-01 至 2015-04-30
  • 项目状态:
    已结题

项目摘要

The objective of this program is to fabricate and characterize thin-film transistors (TFTs) and associated large-area circuits, with focuses on both improving device performance for TFT applications and understanding the mechanisms responsible for NW based device performance variations and reliability. The intellectual merit includes a well-integrated effort which will correlate the device and circuit performance to the materials and structures. The transformative nature of the program includes a focus on addressing overall issues associated with achieving operation at megahertz (MHz) to gigahertz (GHz) frequencies, in contrast to previous studies which have typically addressed basic materials issues and low-frequency performance. The interdisciplinary program will provide a means to utilize the developed thin film technology in two niche applications that are expected to have a large share of the future high tech market,namely flexible displays and radio-frequency identification chips (RFIDs). Two proof-of-concept circuits, a flexible color display and a super regenerative RFID tag, will be developed. The broader impacts of the program include the technological relevance of new device and circuit concepts for applications in thin film electronics, including display technologies and RF circuitry. The program will develop nanowire TFTs and associated circuits that can be fabricated reliably and consistently using simple low temperature fabrication processes. The program also includes an integrated education and outreach effort aimed at addressing challenges in nanotechnologyrelated education/training arising from the interdisciplinary nature of many of the projects, and at providing opportunities for participants from under-represented groups.
该计划的目的是制造和表征薄膜晶体管(TFT)和相关的大面积电路,重点是提高TFT应用的器件性能,并了解负责NW器件性能变化和可靠性的机制。智力价值包括一个良好的综合努力,将相关的设备和电路性能的材料和结构。该计划的变革性质包括专注于解决与实现兆赫(MHz)至千兆赫(GHz)频率运行相关的整体问题,而以前的研究通常解决基本材料问题和低频性能。该跨学科计划将提供一种手段,利用开发的薄膜技术在两个利基应用,预计将有很大的份额,未来的高科技市场,即柔性显示器和射频识别芯片(RFID)。将开发两种概念验证电路,一种柔性彩色显示器和一种超再生RFID标签。 该计划的更广泛影响包括薄膜电子应用中新器件和电路概念的技术相关性,包括显示技术和RF电路。该计划将开发纳米线TFT和相关电路,这些电路可以使用简单的低温制造工艺可靠地制造。该计划还包括一个综合的教育和推广工作,旨在解决纳米技术相关的教育/培训的挑战,从许多项目的跨学科性质产生的,并在代表性不足的群体的参与者提供机会。

项目成果

期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)

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David Janes其他文献

Rectifying current behaviours
纠正当前行为
  • DOI:
    10.1038/nchem.429
  • 发表时间:
    2009-11-01
  • 期刊:
  • 影响因子:
    20.200
  • 作者:
    David Janes
  • 通讯作者:
    David Janes

David Janes的其他文献

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{{ truncateString('David Janes', 18)}}的其他基金

IUCRC Planning Grant Purdue University: Center for Interface Sciences for Emerging Devices & Systems (CISEDS)
IUCRC 规划资助普渡大学:新兴设备接口科学中心
  • 批准号:
    2209853
  • 财政年份:
    2022
  • 资助金额:
    $ 35.97万
  • 项目类别:
    Standard Grant
Low-Resistance Transparent Conductors Based on Co-Percolation in Hybrid Graphene/Nanowire Films
基于混合石墨烯/纳米线薄膜共渗透的低电阻透明导体
  • 批准号:
    1408346
  • 财政年份:
    2014
  • 资助金额:
    $ 35.97万
  • 项目类别:
    Standard Grant
EAGER:Exploring Core-Shell Nanowire Structures for Low-Noise Transistors
EAGER:探索低噪声晶体管的核壳纳米线结构
  • 批准号:
    1118934
  • 财政年份:
    2011
  • 资助金额:
    $ 35.97万
  • 项目类别:
    Standard Grant
NIRT: Molecule/Semiconductor Heterostructure Devices
NIRT:分子/半导体异质结构器件
  • 批准号:
    0506802
  • 财政年份:
    2005
  • 资助金额:
    $ 35.97万
  • 项目类别:
    Standard Grant
Student Travel Support for 2003 IEEE Nanotechnology Conference: August 12-14, 2003 San Francisco, CA.
2003 年 IEEE 纳米技术会议学生旅行支持:2003 年 8 月 12 日至 14 日,加利福尼亚州旧金山。
  • 批准号:
    0320101
  • 财政年份:
    2003
  • 资助金额:
    $ 35.97万
  • 项目类别:
    Standard Grant
NER: Investigation of Electronic Transport in Carbon Nanotubes Using an Ultrafast Photoconduction Technique
NER:使用超快光电导技术研究碳纳米管中的电子传输
  • 批准号:
    0103227
  • 财政年份:
    2001
  • 资助金额:
    $ 35.97万
  • 项目类别:
    Standard Grant
RIA: Experimental Study of Coulomb Blockade Devices
RIA:库仑封锁装置的实验研究
  • 批准号:
    9110980
  • 财政年份:
    1991
  • 资助金额:
    $ 35.97万
  • 项目类别:
    Standard Grant

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