An Investigation of the Effects of H Atom Incorporation on the Optical and Electrical Properties of MBE-Grown Zinc Selenium

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Experimental studies to ascertain the influence of hydrogen atoms incorporated during MBE growth of ZnSe on the electrical and optical properties are conducted. The ability of hydrogen atoms to neutralize shallow and deep levels in the ZnSe bandgap will be investigated. In order to incorporate hydrogen atoms into ZnSe epilayers in a highly controlled way, a UHV-compatible RF plasma discharge free-radical source mounted on the MBE system will be employed rather than a conventional effusion source. Extensive Hall-effect and photoluminescense measurements will be carried out to characterize the salient optical and electronic properties of the epilayers. %%% This research may provide a solution to the general problem of self-compensation in wide-bandgap compound semiconductors which would represent a major step towards understanding the fundamental nature of these materials and provide the basis for realizing improved optoelectronic devices operating in the blue spectral region.