An Investigation of the Effects of H Atom Incorporation on the Optical and Electrical Properties of MBE-Grown Zinc Selenium

实验研究了分子束外延生长过程中掺入的氢原子对薄膜电学和光学性质的影响。氢原子中和带隙中的浅能级和深能级的能力将被研究。为了将氢原子以一种高度可控的方式引入到ZnSe外延层中，将使用与超高真空兼容的射频等离子体放电自由基源，而不是传统的流出源。将进行广泛的霍尔效应和光致发光测量，以表征外延层的显著光学和电学性质。这项研究可能为宽禁带化合物半导体的自补偿这一普遍问题提供解决方案，这将是朝着理解这些材料的基本性质迈出的重要一步，并为实现工作在蓝光区的改进的光电子器件提供基础。

Experimental studies to ascertain the influence of hydrogen atoms incorporated during MBE growth of ZnSe on the electrical and optical properties are conducted. The ability of hydrogen atoms to neutralize shallow and deep levels in the ZnSe bandgap will be investigated. In order to incorporate hydrogen atoms into ZnSe epilayers in a highly controlled way, a UHV-compatible RF plasma discharge free-radical source mounted on the MBE system will be employed rather than a conventional effusion source. Extensive Hall-effect and photoluminescense measurements will be carried out to characterize the salient optical and electronic properties of the epilayers. %%% This research may provide a solution to the general problem of self-compensation in wide-bandgap compound semiconductors which would represent a major step towards understanding the fundamental nature of these materials and provide the basis for realizing improved optoelectronic devices operating in the blue spectral region.