RIA: Development of Optical & Opto-Electronic Devices Based on MBE-Grown ZnSe

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The object of this project is to produce device-quality expitaxial layers of the wide-band gap compound semiconductor, ZnSe. The approach to this problem will be to investigate ZnSe growth by the Molecular Beam Epitaxy (MBE) technique with particular emphasis on doping studies employing a custom- designed MBE system. The program is designed to result in the fabrication of short-wavelength semiconductor laser sources operating around 460 nm for optical storage of information applications and, also, the fabrication of low-loss waveguide structures and "all-optical" computers. The proposed research addresses, in particular, the problem of developing ZnSE material through growth and characterization studies to the point where devices such as those mentioned above can be realized.