Charge Storage and Persistent Photoconductivity in II-VI Semiconductor Alloys

II-VI 半导体合金中的电荷存储和持久光电导性

• 批准号: 9118818
• 负责人: Hongxing Jiang
• 金额: $ 16.5万
• 依托单位: Kansas State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-05-01 至 1995-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9118818&HistoricalAwards=false
• 关键词: Charge; Storage; Persistent; Photoconductivity; II

The storage and relaxation processes of photoexcited charge carriers and persistent photoconductivity (PPC) in II-VI semiconductor alloys is to be investigated. Detailed studies will be made of PPC related critical phenomena, including phase transitions, conductivity noise, and charge carrier decay behavior under different conditions. It will explore the origin of PPC in II-VI semiconductors and provide quantitative characterization of PPC effects. Studies of transport properties, including Coulomb gap, hopping conduction, and structure of electron networks in the PPC mode are proposed. Potential applications of PPC in II-VI semiconductor alloys are discussed.

研究了II-VI半导体合金中光激发载流子和持久光电导(PPC)的存储和驰豫过程。将详细研究与PPC相关的临界现象，包括相变、电导噪声和不同条件下的载流子衰减行为。它将探索II-VI半导体中PPC的起源，并提供PPC效应的定量表征。研究了PPC模式下的输运性质，包括库仑带隙、跳跃电导和电子网络结构。讨论了PPC在II-VI半导体合金中的潜在应用。