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Charge Storage and Persistent Photoconductivity in II-VI Semiconductor Alloys

Charge Storage and Persistent Photoconductivity in II-VI Semiconductor Alloys
II-VI 半导体合金中的电荷存储和持久光电导性
批准号:
9118818
负责人:
Hongxing Jiang
金额:
$16.5万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1992
资助国家:
美国
项目状态:
已结题
起止时间:
1992-05-01 至 1995-10-31

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中文摘要
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英文摘要
The storage and relaxation processes of photoexcited charge carriers and persistent photoconductivity (PPC) in II-VI semiconductor alloys is to be investigated. Detailed studies will be made of PPC related critical phenomena, including phase transitions, conductivity noise, and charge carrier decay behavior under different conditions. It will explore the origin of PPC in II-VI semiconductors and provide quantitative characterization of PPC effects. Studies of transport properties, including Coulomb gap, hopping conduction, and structure of electron networks in the PPC mode are proposed. Potential applications of PPC in II-VI semiconductor alloys are discussed.
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  • 项目类别:
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    2008
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