Erbium Doped III-Nitrides for Optical Communications and Silicon Photonics
Erbium Doped III-Nitrides for Optical Communications and Silicon Photonics
批准号:
1200168
负责人:
Hongxing Jiang
金额:
$39.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2012
资助国家:
美国
项目状态:
已结题
起止时间:
2012-07-01 至 2016-06-30
中文摘要
点击翻译按钮获取中文摘要
英文摘要
This project is jointly funded by the Electronics, Photonics, and Magnetic Devices Program (EPMD) in the Division of Electrical, Communications and Cyber Systems (ECCS) and the Electronic and Photonic Materials Program (EPM) in the Division of Materials Research (DMR).Intellectual Merit: The project includes optimization of Erbium incorporation for enhanced optical efficiency; development of device fabrication processes of nitride optical amplifiers and emitters active at 1.5 microns; and new applications in optoelectronic technologies. The planned research will involve training of graduate and undergraduate students in the areas of novel materials growth, characterization, nano-fabrication techniques and material/device processing using the state-of-the-art facilities. The Er-doped III-nitride photonic structures may lead to novel electrically pumped optical amplifiers. Such devices would possess the unique advantages of semiconductor optical amplifiers (small size, electrical pumping, and ability for photonic integration) as well as those of Er-doped fiber amplifiers (minimal crosstalk between different wavelength channels in optical networks). The studies would also provide input for the development of suitable quality materials and the fundamental understanding of material properties, as well as the technological advancement in the fabrication of integrated optoelectronic devices active from infrared to deep UV. Broader Impact: This proposal has the potential to make transformative advancements in development of electrically pumped, semiconductor optical amplifiers for optical communications and information processing. The project will involve training of graduate and undergraduate students in the areas of novel materials growth, characterization, nano-fabrication techniques and material/device processing using the state-of-the-art facilities. In addition, the PIs will continue their close relationship with local middle - high schools students and to recruit women into their research.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
ARI-MA: Collaborative Research: Hexagonal Boron Nitride Based Neutron Detectors
-
批准号:1038700
-
项目类别:Standard Grant
-
资助金额:$20.0万
-
财政年份:2010
-
负责人:Hongxing Jiang
-
依托单位:
1.54 micron optical amplifiers and emitters based upon erbium doped III-nitrides grown on silicon
-
批准号:0854619
-
项目类别:Standard Grant
-
资助金额:$32.8万
-
财政年份:2008
-
负责人:Hongxing Jiang
-
依托单位:
1.54 micron optical amplifiers and emitters based upon erbium doped III-nitrides grown on silicon
-
批准号:0823894
-
项目类别:Standard Grant
-
资助金额:$32.8万
-
财政年份:2008
-
负责人:Hongxing Jiang
-
依托单位:
Advanced Semiconductor Research Group in the State of Kansas
-
批准号:9977776
-
项目类别:Standard Grant
-
资助金额:$50.0万
-
财政年份:1999
-
负责人:Hongxing Jiang
-
依托单位:
U.S.-China Cooperative Research: Fabrication and Optical Studies of GaN Microcavities
-
批准号:9729582
-
项目类别:Standard Grant
-
资助金额:$7.3万
-
财政年份:1998
-
负责人:Hongxing Jiang
-
依托单位:
Charge Storage and Persistent Photoconductivity in II-VI Semiconductor Alloys
-
批准号:9118818
-
项目类别:Continuing Grant
-
资助金额:$16.5万
-
财政年份:1992
-
负责人:Hongxing Jiang
-
依托单位:
海外基金