Erbium Doped III-Nitrides for Optical Communications and Silicon Photonics

该项目由电气、通信和网络系统部（ECCS）的电子、光子学和磁性器件计划（EPMD）和材料研究部（DMR）的电子和光子材料计划（EPM）共同资助。智力优势：该项目包括优化铒的掺入，以提高光学效率；1.5微米有源氮化光放大器和发射体器件制造工艺的发展以及光电技术的新应用。计划中的研究将包括对研究生和本科生在新材料生长、表征、纳米制造技术和使用最先进设备的材料/设备加工等领域的培训。铒掺杂的iii -氮化物光子结构可能导致新型的电泵浦光放大器。这种器件将具有半导体光放大器的独特优势（体积小、电泵浦和光子集成能力）以及掺铒光纤放大器的独特优势（光网络中不同波长通道之间的串扰最小）。这些研究也将为开发合适的优质材料和对材料特性的基本理解提供输入，以及在从红外到深紫外有源的集成光电器件制造方面的技术进步。更广泛的影响：该提案有可能在光通信和信息处理领域的电泵浦半导体光放大器的发展方面取得革命性的进步。该项目将包括在新材料生长、表征、纳米制造技术和材料/设备加工等领域对研究生和本科生进行培训。此外，pi将继续与当地中学生保持密切关系，并招募女性参与他们的研究。

This project is jointly funded by the Electronics, Photonics, and Magnetic Devices Program (EPMD) in the Division of Electrical, Communications and Cyber Systems (ECCS) and the Electronic and Photonic Materials Program (EPM) in the Division of Materials Research (DMR).Intellectual Merit: The project includes optimization of Erbium incorporation for enhanced optical efficiency; development of device fabrication processes of nitride optical amplifiers and emitters active at 1.5 microns; and new applications in optoelectronic technologies. The planned research will involve training of graduate and undergraduate students in the areas of novel materials growth, characterization, nano-fabrication techniques and material/device processing using the state-of-the-art facilities. The Er-doped III-nitride photonic structures may lead to novel electrically pumped optical amplifiers. Such devices would possess the unique advantages of semiconductor optical amplifiers (small size, electrical pumping, and ability for photonic integration) as well as those of Er-doped fiber amplifiers (minimal crosstalk between different wavelength channels in optical networks). The studies would also provide input for the development of suitable quality materials and the fundamental understanding of material properties, as well as the technological advancement in the fabrication of integrated optoelectronic devices active from infrared to deep UV. Broader Impact: This proposal has the potential to make transformative advancements in development of electrically pumped, semiconductor optical amplifiers for optical communications and information processing. The project will involve training of graduate and undergraduate students in the areas of novel materials growth, characterization, nano-fabrication techniques and material/device processing using the state-of-the-art facilities. In addition, the PIs will continue their close relationship with local middle - high schools students and to recruit women into their research.