U.S.-China Cooperative Research: Fabrication and Optical Studies of GaN Microcavities
U.S.-China Cooperative Research: Fabrication and Optical Studies of GaN Microcavities
批准号:
9729582
负责人:
Hongxing Jiang
金额:
$7.3万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1998
资助国家:
美国
项目状态:
已结题
起止时间:
1998-03-15 至 2002-02-28
中文摘要
9729582该奖项支持堪萨斯州立大学物理系蒋兴祥、林建元和北京大学物理系张北在氮化镓微腔的制造和光学研究方面的合作。由于氮化镓及其合金在蓝光和紫外光波段的光学器件,以及能够在高温、高功率水平和恶劣环境下工作的电子器件等方面的应用,近年来引起了人们的极大兴趣。在拟议的合作研究期间,北京大学小组将准备微腔和激光腔,该小组将在堪萨斯州进行皮秒时间分辨光致发光研究。这项研究的主要目标是确定氮化物激光器中可能的激光机制,并调查和了解未来氮化物光电子器件的基本物理性质,如微腔激光器和垂直腔面发射激光器。
英文摘要
9729582 Jiang and Lin This award supports collaboration between H.X. Jiang and J.Y. Lin, Department of Physics, Kansas State University, and Bei Zhang, Department of Physics, Peking University, on fabrication and optical studies of gallium-nitride microcavities. Gallium nitride and its allied alloys have attracted considerable interest recently due to their applications for optical devices which are active in the blue and ultraviolet wavelengths, and electronic devices capable of operation at high temperature, high power levels, and harsh environments. During the period of the proposed cooperative research, microcavities and laser cavities will be prepared by the Peking University group and picosecond time-resolved photoluminescence studies will be carried out by the group at Kansas. The major goals of the research are to identify possible lasing mechanisms in nitride lasers and to investigate and understand the basic physical properties related to future nitride optoelectronic devices such as microcavity lasers and vertical-cavity surface-emitting lasers.
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Erbium Doped III-Nitrides for Optical Communications and Silicon Photonics
-
批准号:1200168
-
项目类别:Standard Grant
-
资助金额:$39.0万
-
财政年份:2012
-
负责人:Hongxing Jiang
-
依托单位:
ARI-MA: Collaborative Research: Hexagonal Boron Nitride Based Neutron Detectors
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批准号:1038700
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项目类别:Standard Grant
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资助金额:$20.0万
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财政年份:2010
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负责人:Hongxing Jiang
-
依托单位:
1.54 micron optical amplifiers and emitters based upon erbium doped III-nitrides grown on silicon
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批准号:0854619
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项目类别:Standard Grant
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资助金额:$32.8万
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财政年份:2008
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负责人:Hongxing Jiang
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依托单位:
1.54 micron optical amplifiers and emitters based upon erbium doped III-nitrides grown on silicon
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批准号:0823894
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项目类别:Standard Grant
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资助金额:$32.8万
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财政年份:2008
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负责人:Hongxing Jiang
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依托单位:
Advanced Semiconductor Research Group in the State of Kansas
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批准号:9977776
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项目类别:Standard Grant
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资助金额:$50.0万
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财政年份:1999
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负责人:Hongxing Jiang
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依托单位:
Charge Storage and Persistent Photoconductivity in II-VI Semiconductor Alloys
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批准号:9118818
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项目类别:Continuing Grant
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资助金额:$16.5万
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财政年份:1992
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负责人:Hongxing Jiang
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依托单位:
国内基金
海外基金
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