Advanced Semiconductor Research Group in the State of Kansas

堪萨斯州先进半导体研究小组

• 批准号: 9977776
• 负责人: Hongxing Jiang
• 金额: $ 50万
• 依托单位: Kansas State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-08-15 至 2002-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9977776&HistoricalAwards=false
• 关键词: Advanced; Semiconductor; Research; Group; State

Jiang EPS 9977776This project will establish an Interdisciplinary Research Group in advanced semiconductors in Kansas to forward research in the group III-nitride wide band gap semiconductors, a category of which is recognized as integral to the fabrication of certain optoelectronic and electronic devices capable of operating under high power and high temperature conditions. Despite the strong progress made in this research area, further problems still exist which have to do with materials quality and structure. Devices built with III-nitride materials will advance technological improvements in systems related to communications, transportation and energy. The integrative effort as represented in this project by the scientists and engineers from diverse backgrounds is necessary in order to develop innovative approaches to synthesizing materials, and developing state-of-the-art facilities and specialized instrumentation not achievable in a single investigator program. Commitment of NSF EPSCoR funds to this project will also reinforce further investments by universities and the State of Kansas in the area of advanced semiconductors.

Jiang EPS 9977776该项目将在堪萨斯建立一个先进半导体跨学科研究小组，以推进III族氮化物宽带隙半导体的研究，其中一类被认为是制造能够在高功率和高温条件下工作的某些光电和电子器件所不可或缺的。 尽管在这一研究领域取得了很大进展，但仍存在与材料质量和结构有关的进一步问题。 用III族氮化物材料制造的器件将推动通信、运输和能源系统的技术改进。 本项目中所代表的来自不同背景的科学家和工程师的综合努力是必要的，以便开发合成材料的创新方法，并开发在单一研究者计划中无法实现的最先进的设施和专业仪器。 NSF EPSCoR基金对该项目的承诺也将加强大学和堪萨斯州在先进半导体领域的进一步投资。