Advanced Semiconductor Research Group in the State of Kansas

该项目将在堪萨斯州建立一个先进半导体跨学科研究小组，以推进iii族氮化物宽带隙半导体的研究，该类半导体被认为是制造某些能够在高功率和高温条件下工作的光电和电子器件不可或缺的一部分。尽管在这一研究领域取得了很大的进展，但在材料质量和结构方面还存在着进一步的问题。用iii -氮化物材料制造的设备将推动通信、运输和能源相关系统的技术改进。在这个项目中，来自不同背景的科学家和工程师所代表的综合努力是必要的，以便开发合成材料的创新方法，开发最先进的设施和专业仪器，这是单个研究者计划无法实现的。NSF EPSCoR基金对该项目的承诺也将加强大学和堪萨斯州在先进半导体领域的进一步投资。

Jiang EPS 9977776This project will establish an Interdisciplinary Research Group in advanced semiconductors in Kansas to forward research in the group III-nitride wide band gap semiconductors, a category of which is recognized as integral to the fabrication of certain optoelectronic and electronic devices capable of operating under high power and high temperature conditions. Despite the strong progress made in this research area, further problems still exist which have to do with materials quality and structure. Devices built with III-nitride materials will advance technological improvements in systems related to communications, transportation and energy. The integrative effort as represented in this project by the scientists and engineers from diverse backgrounds is necessary in order to develop innovative approaches to synthesizing materials, and developing state-of-the-art facilities and specialized instrumentation not achievable in a single investigator program. Commitment of NSF EPSCoR funds to this project will also reinforce further investments by universities and the State of Kansas in the area of advanced semiconductors.