Chemical Control of Materials Synthesis Through Molecular Precursor Design

通过分子前体设计对材料合成进行化学控制

• 批准号: 9119067
• 负责人: David Baxter
• 金额: $ 21.1万
• 依托单位: Indiana University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-05-01 至 1995-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9119067&HistoricalAwards=false
• 关键词: Chemical; Control; Materials; Synthesis; Through

This award in the Inorganic, Bioinorganic, and Organometallic Program supports the work of Dr. David V. Baxter, Physics Department, and Drs. Kenneth G. Caulton and Malcolm H. Chisholm, Chemistry Department, Indiana University. They will develop precursors for chemical vapor deposition (CVD) of thin films of tungsten carbide, early transition metal nitrides, and some metal oxides and carbides. Metal oxides, nitrides, and carbides will be formed from metal alkoxides, amides, and organometallics, respectively. Specifically targeted for study are the barium alkoxides, whose substituents will be modifed to test the "steric pressure" on thin film properties; fluoroalkoxides of thallium, barium and calcium; metal alkoxides of Mo, W, Al, and alkali metals; and mixed alkoxides containing sodium and tungsten or potassium and zirconium. Emphasis will be placed on optimizing the volatility and hydrolytic insensitivity of precursors, continuing studies of the mechanism of transformation of precursors into solid state materials, and studying the role of precursor design in the properties of the final product. %%% The development of new electronic materials depends on the ability to control the composition of the material, its purity, and its effective and economic deposition. In this study, the influence of the starting material prior to deposition will be investigated for a variety of materials, as well as the mechanism of deposition. Emphasis will be placed on the chemical synthesis and modification of new precursors in order to produce high quality thin films.

这个无机、生物无机和有机金属项目的奖项支持物理系的David V. Baxter博士和David V. Baxter博士的工作。Kenneth G. Caulton和Malcolm H. Chisholm，印第安纳大学化学系。他们将开发化学气相沉积（CVD）碳化钨薄膜、早期过渡金属氮化物和一些金属氧化物和碳化物的前驱体。金属氧化物、氮化物和碳化物将分别由金属烷氧化物、酰胺和有机金属形成。研究的具体目标是钡烷氧化物，其取代基将被修改以测试薄膜性能的“位压”；铊、钡和钙的氟烷氧化物；Mo、W、Al和碱金属的金属醇氧化物；以及含有钠和钨或钾和锆的混合醇氧化物。重点将放在优化前驱体的挥发性和水解不敏感性，继续研究前驱体转化为固态材料的机理，并研究前驱体设计在最终产品性能中的作用。新型电子材料的开发取决于能否控制材料的组成、其纯度以及其有效经济的沉积。在本研究中，将研究沉积前的起始材料对多种材料的影响，以及沉积的机制。重点将放在新的前驱体的化学合成和改性，以生产高质量的薄膜。