Effect of Interface Structure on Transport Properties of Metallic Multilayers

界面结构对金属多层膜传输性能的影响

• 批准号: 9314018
• 负责人: David Baxter
• 金额: $ 24.5万
• 依托单位: Indiana University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-02-15 至 1997-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9314018&HistoricalAwards=false
• 关键词: Effect; Interface; Structure; Transport; Properties

9314018 Baxter This project will study the effects of interfacial structure on electron transport in a variety of metallic multilayers. Multilayered materials with varying degrees of interfacial order will be prepared using both UHV electron beam evaporation and magnetron sputtering. The effect of structural changes on interface sensitive transport properties such as the anisotropy of the electron diffusion constant in non-magnetic multilayers and the Giant Magnetoresistance (GMR) effect in magnetic systems will be studied. Controlled changes in the structure of the interface will be made by combining thermal annealing with in- situ X-ray diffraction studies, and such changes will be correlated with associated changes in the transport properties. This project involves a collaboration between researchers at Indiana University and the General Motors Research and Development Center. %%% The behavior of electrons at interfaces between two different materials plays an important role in technologies such as integrated circuits, magnetic recording, and sensors. Modern technology makes possible the production of thin films in which the atomic composition alternates periodically few atomic layers, thereby providing an ideal laboratory for studying the electronic properties of interfaces. The large concentration of interfaces in such "multilayered materials" can cause their properties to be quite different from those of the corresponding bulk materials. An example of this can be seen in the recently discovered Giant Magnetoresistance effect which holds great promise for the development of new magnetic sensor materials. Future development of such materials will require detailed understanding of how their electronic properties depend on the atomic structure of the interfaces between the individual layers. This project, which combines research at Indiana University and the General Motors Research and Development Center, is dedicated to the study of this fundamental an d technologically important question. ***

9314018巴克斯特这个项目将研究界面结构对电子传输在各种金属多层膜的影响。 具有不同程度的界面秩序的多层材料将使用超高真空电子束蒸发和磁控溅射制备。 将研究结构变化对界面敏感输运性质的影响，例如非磁性多层膜中电子扩散常数的各向异性和磁性系统中的巨磁电阻效应。 将通过结合热退火与原位X射线衍射研究来控制界面结构的变化，并且这种变化将与输运性质的相关变化相关。 该项目涉及印第安纳州大学和通用汽车研发中心的研究人员之间的合作。 电子在两种不同材料界面上的行为在集成电路、磁记录和传感器等技术中起着重要作用。 现代技术使薄膜的生产成为可能，薄膜中的原子组成周期性地交替几个原子层，从而为研究界面的电子特性提供了理想的实验室。 这种“多层材料”中界面的大量集中会导致它们的性质与相应的块状材料的性质大不相同。 这方面的一个例子可以在最近发现的巨磁电阻效应中看到，该效应为新的磁传感器材料的开发带来了巨大的希望。 这种材料的未来发展将需要详细了解它们的电子特性如何取决于各个层之间界面的原子结构。 该项目结合了印第安纳州大学和通用汽车研究与开发中心的研究，致力于研究这一基础性和技术性的重要问题。 ***