Tera-Hertz Metal-Semiconductor-Metal Photodetectors

这项研究的目标是，根据我们最初的 成功，继续研究和开发 超高速金属-半导体-金属 具有亚100纳米指状物的光电探测器 间距和手指宽度，与子操作， 皮秒响应时间和太赫兹截止 频率，并可以检测到广泛的 波长从可见光到红外线。 拟议 研究将集中在以下四个方面： (1)制作具有以下特性的太赫兹MSM光电探测器 亚100nm指间距和指宽度， 超高分辨率电子束光刻， 最初在GaAs上，后来在InGaAs、InGaP、SOI（Si 绝缘体上）和Si-Ge的不同响应 波长 (2)实验研究和 从理论上讲， 探测器的速度和灵敏度。 (3)探讨 MSM光电探测器的动态性能 使用飞秒脉冲激光。 （4）使用 超高速MSM检测器作为载体进行研究 电子和空穴的弹道传输， 亚100纳米的指间距和高电 场，特别是载波速度过冲，以及 探索它们在改善 探测器的速度

The goal of this research is, based on our initial success, to continue investigating and developing ultra-high speed metal-semiconductor-metal (MSM) photodetectors that have a sub-100nm finger spacing and finger width, operate with a sub- picosecond response time and a tera-hertz cut-off frequency, and can detect a broad range of wavelengths from visible to infrared. The proposed research will focus on the following four aspects: (1) Fabricate tera-hertz MSM photodetectors with sub-100nm finger spacing and finger width using ulta-high resolution electron beam lithography, initially on GaAs, and later InGaAs,InGaP,SOI (Si on insulator), and Si-Ge for different response wavelengths. (2) Investigate experimentally and theoretically the factors that can increase the detectors' speed and sensitivity. (3) Investigate the dynamic performance of the MSM photodetectors using femto-second pulsed lasers. And (4) use the ulta-high speed MSM detectors as a vehicle to study ballistic transport of electrons and holes between a sub-100nm finger spacing and in a high electric field, particularly carrier velocity overshoots, and explore their application on improvement of detectors' speed.