Nanofabrication and Nanoscale Devices

该方案研究的目标是：(1)开发纳米制造两个关键领域的关键技术：超高分辨率电子束光刻和反应离子刻蚀；(2)利用PI小组开发的现有纳米制造技术(亚30 nm)，制造各种创新的高速纳米器件，如横向共振隧道晶体管，量子波导晶体管和单电子晶体管；(3)利用这些器件作为研究载体，研究纳米器件中的弹道、量子输运和库仑阻塞，开发新的器件概念，并探索新的设备功能和革命性的IC架构。

The goals of the proposal research are to (1) develop key technologies in two critical areas of nanofabrication: ultra-high resolution electron beam lithography and reactive ion etching; (2) use the existing nanofabrication technologies (sub-30 nm) developed in the PI's group to fabricate various innovative high- speed nanoscale devices, such as lateral resonant tunneling transistors, quantum waveguide transistors, and single electron transistors; and (3) use these devices as research vehicles to study ballistic, quantum transport, and Coulomb blockade in nanometer devices, develop new device concepts, and explore new device functions and revolutionary IC architectures.