Nanofabrication and Nanoscale Devices

本研究的目的是（1） 在两个关键领域发展关键技术 纳米纤维：超高分辨率 电子束光刻和反应离子 蚀刻;（2）使用现有的纳米纤维 PI开发的技术（30 nm以下） 集团打造各种创新的高 加速纳米级器件，例如横向 共振隧穿晶体管，量子的 波导晶体管和单电子 晶体管;以及（3）使用这些器件作为 研究弹道学、量子力学、 传输和库仑阻塞 纳米器件，开发新器件 概念，并探索新的设备功能 和革命性的IC架构。

The goals of the proposal research are to (1) develop key technologies in two critical areas of nanofabrication: ultra-high resolution electron beam lithography and reactive ion etching; (2) use the existing nanofabrication technologies (sub-30 nm) developed in the PI's group to fabricate various innovative high- speed nanoscale devices, such as lateral resonant tunneling transistors, quantum waveguide transistors, and single electron transistors; and (3) use these devices as research vehicles to study ballistic, quantum transport, and Coulomb blockade in nanometer devices, develop new device concepts, and explore new device functions and revolutionary IC architectures.