Nanofabrication and Nanodevices

9522201周的研究采用了纳米制造技术，采用超高分辨率电子束光刻、RIE和其他纳米技术的集成，实现了独特和新颖的器件结构。重点是改进电子束光刻系统和研究新的RIE蚀刻，以确定尺寸低于10纳米的纳米结构。这项研究涉及三种纳米结构：(1)室温下工作的硅量子点晶体管，(2)超快硅MSM光电探测器和(3)使用MSM PD‘s和亚100 nm硅MOSFET的高速光接收器。为了实现这种结构，用LB6灯丝代替钨丝，电子束直径将从4 nm减小到2.5 nm，系统噪声降低，加速电压从40keV提高到50keV。无机抗蚀剂将与氯基RIE工艺一起检查10 nm以下的特征尺寸。***

9522201 Chou The research uses nanofabrication which employs ultra-high resolution e-beam lithography, RIE and the integration of other nanotechnologies to realize unique and novel device structures. The emphasis is on improving the e-beam lithography system and examining new RIE etches to define nanostructures with sub-10 nm dimensions. The research addresses three nanostructures: (1) Si quantum-Dot transistors operating at room temperature, (2) ultrafast Si MSM photodetectors and (3) high-speed optical receivers using MSM PD's and sub-100 nm Si MOSFETs. In order to realize these structures the e-beam diameter will be reduced from 4 nm to 2.5 nm by replacing their tungsten filament with a LB6 filament, the system noise will be reduced and the accelerating voltage will be increased from 40 KeV to 50 KeV. Inorganic resists will be examined for sub 10 nm feature sizes along with chlorine-based RIE processes. ***