Cutting, Selecting, and Transfer-Printing Technology for Graphene-on-Demand over Entire Wafers and FET Applications

本研究的目标是：(a)开发将高质量的少层石墨烯放置在大型晶圆上的整个器件有源区域的新方法，通过石墨烯按需方法精确地切割，选择和转移打印（GCST）高质量的石墨烯到晶圆上，以及(b)作为GCST的测试平台，扩展和开发新的石墨烯FET结构，材料和集成电路制造技术。这项研究是基于首席研究小组最近成功演示了首席研究小组GCST方法的最关键步骤：从大块石墨到另一个衬底的器件活性区域，精确切割，剥离和转移打印（带有印章）3-6层单层石墨烯；以及使用gcst印刷的石墨烯成功制造高性能场效应管，具有最高的场效应管迁移率和驱动电流。这项研究还依赖于首席研究员小组之前在纳米图案化（包括纳米印迹和转移图案化）和纳米硅mosfet方面的广泛工作。这项研究是为了进一步发展这些成功，并进行实现目标所必需的其他创新。该研究将在新的纳米制造技术、新材料和石墨烯场效应管方面产生新的前沿知识，并将在未来的纳米制造和下一代电子产品中具有广泛的应用。因此，这项研究的成功将使美国受益美国在纳米技术方面的竞争力，有助于美国工业，并将潜在地产生重大的经济影响。该研究将培养纳米制造和纳米电子学新技术领域的研究生和本科生。

The goals of this research are to (a) develop new ways of placing high-quality few-layer graphene on entire device active areas over a large wafer, by a graphene-on-demand approach that precisely cuts, selects and transfer-prints (GCST) high-quality graphene from graphite onto the wafer, and (b) as a test bed for GCST, scale and develop new graphene FET structures, materials, and fabrication technologies for IC integration. The research is based on the Principal Investigator groups recent successful demonstration of the most critical steps of Principal Investigator groups GCST approach: precisely cutting, exfoliating and transfer-printing (with a stamp) of 3-6 monolayer thick graphene from bulk graphite to device active areas of another substrate; and successful fabrication of high performance FETs using GCST-printed graphene that have FET mobility and on drive current that are among the highest demonstrated. The research also relies on Principal Investigator groups previous extensive work in nanopatterning (including nanoimprinting and transfer-patterning) and nanoscale Si MOSFETs. The research is to further develop these successes and make other innovations that are necessary to achieve the goals. The research will generate new cutting-edge knowledge in new nanofabrication technologies, new materials, and graphene FETs, and will have broad applications in future nanomanufacturing and next generation electronics. Thus, the success of the research will benefit U.S.'s competitiveness in nanotechnology, aid U.S. industry, and will potentially have significant economic impact. The research will train graduate and undergraduate students in the new technology area of nanofabrication and nanoelectronics.