Cutting, Selecting, and Transfer-Printing Technology for Graphene-on-Demand over Entire Wafers and FET Applications

这项研究的目标是：(A)开发一种新的方法，将高质量的少层石墨烯放置在大型晶片上的整个器件有源区上，通过按需石墨烯方法将高质量的石墨烯从石墨精确地切割、选择并转移到晶片上，以及(B)作为GCST的试验台，扩大并开发用于IC集成的新的石墨烯FET结构、材料和制造技术。本研究基于首席调查组最近成功演示了首席调查组GCST方法中最关键的步骤：将3-6层厚的石墨烯从块状石墨精确切割、剥离和转移印刷(带印章)到另一个衬底的设备有源区；以及使用GCST印刷的石墨烯成功制造出具有FET迁移率和驱动电流的高性能FET。这项研究还依赖于首席调查员小组之前在纳米刻蚀(包括纳米压痕和转移图案化)和纳米级硅MOSFET方面的广泛工作。这项研究是为了进一步发展这些成功，并进行其他必要的创新，以实现这些目标。这项研究将在新的纳米制造技术、新材料和石墨烯FET方面产生新的前沿知识，并将在未来的纳米制造和下一代电子产品中有广泛的应用。因此，这项研究的成功将有利于美国S在纳米技术领域的竞争力，帮助美国的产业，并可能产生重大的经济影响。该研究将培养纳米制造和纳米电子新技术领域的研究生和本科生。

The goals of this research are to (a) develop new ways of placing high-quality few-layer graphene on entire device active areas over a large wafer, by a graphene-on-demand approach that precisely cuts, selects and transfer-prints (GCST) high-quality graphene from graphite onto the wafer, and (b) as a test bed for GCST, scale and develop new graphene FET structures, materials, and fabrication technologies for IC integration. The research is based on the Principal Investigator groups recent successful demonstration of the most critical steps of Principal Investigator groups GCST approach: precisely cutting, exfoliating and transfer-printing (with a stamp) of 3-6 monolayer thick graphene from bulk graphite to device active areas of another substrate; and successful fabrication of high performance FETs using GCST-printed graphene that have FET mobility and on drive current that are among the highest demonstrated. The research also relies on Principal Investigator groups previous extensive work in nanopatterning (including nanoimprinting and transfer-patterning) and nanoscale Si MOSFETs. The research is to further develop these successes and make other innovations that are necessary to achieve the goals. The research will generate new cutting-edge knowledge in new nanofabrication technologies, new materials, and graphene FETs, and will have broad applications in future nanomanufacturing and next generation electronics. Thus, the success of the research will benefit U.S.'s competitiveness in nanotechnology, aid U.S. industry, and will potentially have significant economic impact. The research will train graduate and undergraduate students in the new technology area of nanofabrication and nanoelectronics.