Cutting, Selecting, and Transfer-Printing Technology for Graphene-on-Demand over Entire Wafers and FET Applications

整个晶圆和 FET 应用中按需石墨烯的切割、选择和转印技术

• 批准号: 0826131
• 负责人: Stephen Chou
• 金额: $ 28万
• 依托单位: Princeton University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-08-01 至 2012-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0826131&HistoricalAwards=false
• 关键词: Cutting; Selecting; Transfer; Printing; Technology

The goals of this research are to (a) develop new ways of placing high-quality few-layer graphene on entire device active areas over a large wafer, by a graphene-on-demand approach that precisely cuts, selects and transfer-prints (GCST) high-quality graphene from graphite onto the wafer, and (b) as a test bed for GCST, scale and develop new graphene FET structures, materials, and fabrication technologies for IC integration. The research is based on the Principal Investigator groups recent successful demonstration of the most critical steps of Principal Investigator groups GCST approach: precisely cutting, exfoliating and transfer-printing (with a stamp) of 3-6 monolayer thick graphene from bulk graphite to device active areas of another substrate; and successful fabrication of high performance FETs using GCST-printed graphene that have FET mobility and on drive current that are among the highest demonstrated. The research also relies on Principal Investigator groups previous extensive work in nanopatterning (including nanoimprinting and transfer-patterning) and nanoscale Si MOSFETs. The research is to further develop these successes and make other innovations that are necessary to achieve the goals. The research will generate new cutting-edge knowledge in new nanofabrication technologies, new materials, and graphene FETs, and will have broad applications in future nanomanufacturing and next generation electronics. Thus, the success of the research will benefit U.S.'s competitiveness in nanotechnology, aid U.S. industry, and will potentially have significant economic impact. The research will train graduate and undergraduate students in the new technology area of nanofabrication and nanoelectronics.

本研究的目标是（a）通过石墨烯按需方法开发在大晶片上的整个器件有源区上放置高质量少层石墨烯的新方法，该方法精确地从石墨切割，选择和转印（GCST）高质量石墨烯到晶片上，以及（B）作为GCST的测试床，缩放和开发新的石墨烯FET结构，材料，和集成电路集成的制造技术。该研究是基于首席研究员小组最近成功演示的最关键的步骤，首席研究员小组GCST的方法：精确切割，剥离和转印从块状石墨到另一个衬底的器件有源区域的3-6个单层厚的石墨烯（用印模）;以及使用GCST印刷的石墨烯成功制造高性能FET，其具有最高的FET迁移率和驱动电流。该研究还依赖于首席研究员小组先前在纳米图案化（包括纳米压印和转移图案化）和纳米级Si MOSFET方面的广泛工作。这项研究是为了进一步发展这些成功，并作出其他必要的创新，以实现这些目标。 该研究将在新纳米制造技术，新材料和石墨烯FET方面产生新的前沿知识，并将在未来的纳米制造和下一代电子产品中具有广泛的应用。因此，这项研究的成功将使美国受益。美国在纳米技术方面的竞争力，有助于美国工业，并可能产生重大的经济影响。这项研究将培养研究生和本科生在纳米纤维和纳米电子学的新技术领域。