A Non-Invasive Sensor Technique for Process Control in Plasma Processing Reactors
A Non-Invasive Sensor Technique for Process Control in Plasma Processing Reactors
批准号:
9161456
负责人:
M. Meyyappan
金额:
$4.99万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1992
资助国家:
美国
项目状态:
已结题
起止时间:
1992-01-01 至 1992-09-30
中文摘要
这项研究活动旨在开发一种非侵入性的 等离子体反应器的监测技术。 的基础 这种方法是激光诱导荧光(LIF)现象 可用于进行三维测绘 等离子体特性 这将被分析,以提供定量的 关于组成物种的信息、外观检测或 物种和污染物的消失以及终点检测。 该技术还将开发创新的方法, 扫描具有高度的准确性和灵敏度。 的 可以使用技术来提供可靠监视 干法等离子体工艺的工艺控制。 干式等离子体工艺广泛用于制造 半导体器件。 实现闭环的能力 控制将对产量和效率产生重大影响 这一过程对一个重要的工业部门有很大的好处。
英文摘要
This research activity is designed to develop a non-invasive technique for the monitoring of plasma reactors. The basis for this approach is the phenomenon of Laser Induced Fluorescence (LIF) which can be used to conduct three-dimensional mapping of the plasma properties. This will be analyzed to provide quantitative information on constituent species, detection of appearance or disappearance of species and contaminants, and end point detection. The technique will also develop innovative methods to perform rapid scanning with a high degree of accuracy and sensitivity. The technique can be used to provide reliable monitoring to enable process control of the dry plasma process. The dry plasma process is widely used for the manufacturing of semi-conductor devices. The ability to implement closed loop control will have significant impact on the yield and efficiency of the process with large benefits to a vital industry segment.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Process Control, Diagnostics, and Modeling in Semiconductor Manufacturing I (Symposium to be held in Reno, NE, May 2l-26, l995)
-
批准号:9521742
-
项目类别:Standard Grant
-
资助金额:$0.4万
-
财政年份:1995
-
负责人:M. Meyyappan
-
依托单位:
A Noninvasive Temperature Sensor for Plasma Processing of Semiconductors
-
批准号:9260650
-
项目类别:Standard Grant
-
资助金额:$5.0万
-
财政年份:1993
-
负责人:M. Meyyappan
-
依托单位:
Ultra Fast Time Resolved Spectrofluorometer
-
批准号:9260066
-
项目类别:Standard Grant
-
资助金额:$4.95万
-
财政年份:1993
-
负责人:M. Meyyappan
-
依托单位:
海外基金