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A Noninvasive Temperature Sensor for Plasma Processing of Semiconductors

A Noninvasive Temperature Sensor for Plasma Processing of Semiconductors
用于半导体等离子体处理的非侵入式温度传感器
批准号:
9260650
负责人:
M. Meyyappan
金额:
$5.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1993
资助国家:
美国
项目状态:
已结题
起止时间:
1993-05-01 至 1994-01-31

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中文摘要
翻译
该提案概述了一项研究 开发一种非侵入性的 应用温度传感器 在干法蚀刻(等离子体蚀刻, 例如反应离子蚀刻) 电子材料。 有 对这种传感器的迫切需求, 目前,由于温度 水会影响 蚀刻工艺;蚀刻速率, 底切和表面质量。 此外,所使用的光致抗蚀剂 因为掩蔽开始在 高温 因此 重要的是要衡量和监测 晶圆温度始终保持不变。 拟议的努力将导致 一种新型温度传感器, 测量和监测晶片 干法刻蚀温度 环境 这里的创新 所提出的技术 可以实现一种非侵入性的, 非接触和非破坏性 表面处理方法 温度测量, 等离子蚀刻室 在 相比之下,现有技术 侵入性和麻烦, 接触的需要排除了 测量工艺晶片 温度;相反,只有 阴极的温度或 此时测量虚拟晶片。 拟议的研究是 研究光反射率作为 温度传感器用于上述 目的. 的能隙 半导体材料将是 使用调制测量 光谱和相关的 表面温度 I期 努力证明可行性 这种技术的准确性。 第二阶段的努力将导致 一个原型仪器, 展示其在改善 在工业中的实际蚀刻 环境
英文摘要
This proposal outlines a research program to develop a non-invasive temperature sensor for application in dry etching (plasma etching, reactive ion etching for example) of electronic materials. There is a critical need for such sensors at present since the temperature of the water influences the results of the etching process; etch rate, undercutting, and surface quality. In addition, the photoresist used for masking begins to char at elevated temperatures. Hence, it is important to measure and monitor the wafer temperature at all times. The proposed effort would result in a novel temperature sensor to measure and monitor wafer temperature in dry etching environment. The innovation here is that the proposed technique would enable a non-invasive, contactless and non-destructive method of performing surface temperature measurement in a plasma etching chamber. In contrast, existing techniques are invasive and cumbersome and the need for contacting precludes measuring the process-wafer temperature; instead only the temperature of the cathode or a dummy wafer is measured at present. The proposed research is to investigate photoreflectance as a temperature sensor for the above purpose. The energy gap of the semiconductor material would be measured using modulation spectroscopy and correlated to the surface temperature. The Phase I effort demonstrate the feasibility and accuracy of this technique. The Phase II effort would result in a prototype instrument and demonstrate its use in improving practical etching in an industrial environment.
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会议论文
Process Control, Diagnostics, and Modeling in Semiconductor Manufacturing I (Symposium to be held in Reno, NE, May 2l-26, l995)
  • 批准号:
    9521742
  • 项目类别:
    Standard Grant
  • 资助金额:
    $0.4万
  • 财政年份:
    1995
  • 负责人:
    M. Meyyappan
  • 依托单位:
Ultra Fast Time Resolved Spectrofluorometer
  • 批准号:
    9260066
  • 项目类别:
    Standard Grant
  • 资助金额:
    $4.95万
  • 财政年份:
    1993
  • 负责人:
    M. Meyyappan
  • 依托单位:
A Non-Invasive Sensor Technique for Process Control in Plasma Processing Reactors
  • 批准号:
    9161456
  • 项目类别:
    Standard Grant
  • 资助金额:
    $4.99万
  • 财政年份:
    1992
  • 负责人:
    M. Meyyappan
  • 依托单位:
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