Properties of Correlated and Multilayer Two-Dimensional Systems

相关多层二维系统的性质

• 批准号: 9202255
• 负责人: Herbert Fertig
• 金额: $ 11.4万
• 依托单位: University of Kentucky Research Foundation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-08-15 至 1996-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9202255&HistoricalAwards=false
• 关键词: Properties; Correlated; Multilayer; Two; Dimensional

Theoretical investigations will be carried out on two-dimensional quantum semiconductor systems studying effects of disorder, finite temperatures and unique device structures with and without a magnetic field. The behavior of edges in the Wigner crystal regime in a strong magnetic field will be considered and a method for calculating relaxation, reconstruction and melting of the edge electrons under various circumstances will be studied. The consequences of transport and electromagnetic absorption of such effects will be considered. A detailed study of defects in the Wigner crystal will be undertaken using a variational wavefunction approach which should help determine the importance of quantum fluctuations and will be a first step in understanding both the melting transition and finite temperature transport. Edge states in the quantum Hall regime will be studied with emphasis on the effects disorder may have on the low-lying excitations of such systems. Finally, a careful study of the influence of potential inhomogeneities in a two-layer system on interplane tunneling will be undertaken. %%% This theoretical study will focus on the properties of a new state of matter associated with a gas of strongly interacting electrons confined to two-dimensions. Usually this state of matter is found at the semiconductor interface in a strong magnetic field. One possible outcome of this electron gas is to condense into a crystalline state, the Wigner crystal. The research will study the behavior of this Wigner crystal. Besides being of fundamental physical interest, there may be ramifications of this research on microelectronics.

理论研究将在二维 研究无序效应的量子半导体系统 温度和独特的器件结构， 磁场 维格纳晶体的边缘行为 将考虑在强磁场中， 计算边缘的松弛、重构和熔化 将研究各种情况下的电子。 的 这种物质的运输和电磁吸收的后果 将考虑影响。 详细研究了 维格纳晶体将采用变分波函数 这种方法应该有助于确定量子的重要性， 波动，并将是了解这两个 熔融转变和有限温度输运。 边缘态 在量子霍尔制度将研究重点放在 影响混乱可能有低的激发这样的 系统. 最后，仔细研究了势的影响 在两层系统中关于平面间隧穿的不均匀性将 进行。 %%% 这一理论研究将集中在一个新的状态的性质 与强烈相互作用的电子气体有关的物质 局限于二维空间。 通常这种物质状态 在强磁场中的半导体界面上。 一 这种电子气的可能结果是凝结成 晶体状态，维格纳晶体 该研究将研究 这种维格纳晶体的行为。 除了基本的 物理兴趣，这项研究可能会产生影响， 微电子学