Silicides for Microelectronics

微电子用硅化物

• 批准号: 9202595
• 负责人: Clifford Myers
• 金额: $ 31.44万
• 依托单位: SUNY at Binghamton
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-09-01 至 1995-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9202595&HistoricalAwards=false
• 关键词: Silicides; Microelectronics

The equilibrium phases and thermodynamic stabilities in transition metal silicide systems of importance in micro electronics will be studied. The titanium-silicon system will be investigated by high temperature knudsen cell mass spectrometry, and the cobalt-silicon and copper-silicon systems will be studied by means of high temperature solid state galvanic cells. Enthalpies of reaction of metals with amorphour silicon in multilayer composites and enthalpies of reaction of metals with crystalline silicon in bilayers will be studied by differential scanning calorimetry. Heat capacities in all three systems will be measured between 14K and 1000K by differential scanning calorimetry in order to obtain standard molar entropies and other thermal functions for the titanium, cobalt, and copper silicides. The titanium and cobalt silicides are materials of choice for interconnect applications in micro electronics. The results are expected to be of the importance in dealing with questions of stability and compatibility in both the fabrication of devices and in their use.

将研究微电子学中重要的过渡金属硅化物体系的平衡相和热力学稳定性。 钛-硅体系将采用高温克努森池质谱法进行研究，钴-硅和铜-硅体系将采用高温固态原电池进行研究。 通过差示扫描量热法研究多层复合材料中金属与非晶硅的反应焓以及双层中金属与晶硅的反应焓。 所有三个系统的热容量将通过差示扫描量热法在 14K 至 1000K 之间进行测量，以获得钛、钴和硅化铜的标准摩尔熵和其他热函数。 硅化钛和硅化钴是微电子互连应用的首选材料。 预计这些结果对于解决设备制造及其使用中的稳定性和兼容性问题具有重要意义。