Silicides for Microelectronics

本文将研究在微电子学中具有重要意义的过渡金属硅化体系的平衡相和热力学稳定性。钛硅体系将采用高温克努森细胞质谱法进行研究，钴硅体系和铜硅体系将采用高温固态原电池进行研究。用差示扫描量热法研究了金属与非晶硅在多层复合材料中的反应焓和金属与晶体硅在双层复合材料中的反应焓。通过差示扫描量热法在14K和1000K之间测量所有三种体系的热容，以获得钛、钴和铜硅化物的标准摩尔熵和其他热函数。钛和钴硅化物是微电子互连应用的首选材料。预计这些结果将对处理设备制造和使用中的稳定性和兼容性问题具有重要意义。

The equilibrium phases and thermodynamic stabilities in transition metal silicide systems of importance in micro electronics will be studied. The titanium-silicon system will be investigated by high temperature knudsen cell mass spectrometry, and the cobalt-silicon and copper-silicon systems will be studied by means of high temperature solid state galvanic cells. Enthalpies of reaction of metals with amorphour silicon in multilayer composites and enthalpies of reaction of metals with crystalline silicon in bilayers will be studied by differential scanning calorimetry. Heat capacities in all three systems will be measured between 14K and 1000K by differential scanning calorimetry in order to obtain standard molar entropies and other thermal functions for the titanium, cobalt, and copper silicides. The titanium and cobalt silicides are materials of choice for interconnect applications in micro electronics. The results are expected to be of the importance in dealing with questions of stability and compatibility in both the fabrication of devices and in their use.