Non-Spiking Ohmic Contact Metallization for p-InP

本提案的目的是 非尖峰欧姆接触的形成 p型InP。 这里建议适用 固相再生长（SPR）原理， 将这种接触制造到p-InP。 浅 接触（反应深度100 A）中107 n- cm 2接触电阻率已经在n- 和p型GaAs。 的 再生过程始于低温 金属M（例如Pd或Ni）和 化合物半导体衬底AB， 产生中间三元MxABy相。 在较高温度下的后续反应 在Si、Ge或In的覆盖层与 中间相导致分解 中间相和外延相 化合物层的再生长 半导体掺杂或合金化， 覆盖层元素。 非化学计量的 中间三元MxABy相（即，其中y 不等于1）将允许掺杂元素 优先选址（选址 机制），从而形成高度掺杂的 表面再生长层。 掺杂的薄层 元素（即Mg、Mn、Si或Ge）嵌入在 金属M已成功地用于 有意掺杂再生长层以减少 接触电阻率显著降低。 在这 项目，Pd和Ni基接触系统 由于三元化合物 如Pd4.8InP和Ni2.7InP 在低温下Pd、Ni和InP之间。 Ge、Si、In或Sb的覆盖层将是 调查，以推动分解的 Pd（或Ni）三元化合物及其外延生长 Inp的再生。一层薄薄的 嵌入式电子受体元件 特性（即Mn、Mg或Zn）将被 贯彻 在这项研究中， 透射电子显微镜和背面 将使用二次离子质谱法 用于结构调查和传输 线模型测量将用于 电测量 SPR联系人是 期望提供更统一的接口， 接触电阻率较低。

The objective of this proposal is directed toward the formation of non-spiking ohmic contacts to p-type InP. It is proposed here to apply the principle of solid phase regrowth (SPR) to fabricate such contacts to p-InP. Shallow contacts (reaction depth100A) of mid 107n- cm2 contact resistivity have been achieved on n- and p-type GaAs by the SPR method. The regrowth process begins with a low-temperature reaction between a metal M (e.g. Pd or Ni) and a compound semiconductor substrate, AB, to produce an intermediate ternary MxABy phase. A subsequent reaction at a higher temperature between an overlayer of Si, Ge, or In and the intermediate phase results in the decomposition of the intermediate phase and the epitaxial regrowth of a layer of the compound semiconductor doped or alloyed with the overlayer element. The nonstoichiometry of the intermediate ternary MxABy phase (i.e. where y is not equal to 1) will allow the doping element to occupy the preferential sites (site selection mechanism), thus forming a highly doped surface regrown layer. A thin layer of doping element (i.e. Mg, Mn, Si, or Ge) imbedded in metal M has been used to successfully intentionally dope the regrowth layer to reduce the contact resistivity significantly. In this project, the Pd- and Ni-based contact system will be investigated since ternary compounds such as Pd4.8InP and Ni2.7InP have been observed between Pd, Ni and InP at low temperatures. Overlayers of Ge, Si, In or Sb will be investigated to drive the decomposition of the Pd (or Ni) ternary compounds and the epitaxial regrowth of Inp. The effects of a thin layer of embedded acceptor element on the electrical characteristics (i.e. Mn, Mg, or Zn) will be carried out. In this research cross-sectional transmission electron microscopy and backside secondary ion mass spectrometry will be used for structural investigation, and Transmission Line Model measurements will be utilized for electrical measurement. The SPR contacts are expected to provide more uniform interfaces and lower contact resistivity compared to.