Non-Spiking Ohmic Contact Metallization for p-InP

p-InP 的非尖峰欧姆接触金属化

• 批准号: 9202875
• 负责人: Long-Ching Wang
• 金额: $ 24万
• 依托单位: Texas A&M Research Foundation
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-09-01 至 1996-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9202875&HistoricalAwards=false
• 关键词: Non; Spiking; Ohmic; Contact; Metallization

The objective of this proposal is directed toward the formation of non-spiking ohmic contacts to p-type InP. It is proposed here to apply the principle of solid phase regrowth (SPR) to fabricate such contacts to p-InP. Shallow contacts (reaction depth100A) of mid 107n- cm2 contact resistivity have been achieved on n- and p-type GaAs by the SPR method. The regrowth process begins with a low-temperature reaction between a metal M (e.g. Pd or Ni) and a compound semiconductor substrate, AB, to produce an intermediate ternary MxABy phase. A subsequent reaction at a higher temperature between an overlayer of Si, Ge, or In and the intermediate phase results in the decomposition of the intermediate phase and the epitaxial regrowth of a layer of the compound semiconductor doped or alloyed with the overlayer element. The nonstoichiometry of the intermediate ternary MxABy phase (i.e. where y is not equal to 1) will allow the doping element to occupy the preferential sites (site selection mechanism), thus forming a highly doped surface regrown layer. A thin layer of doping element (i.e. Mg, Mn, Si, or Ge) imbedded in metal M has been used to successfully intentionally dope the regrowth layer to reduce the contact resistivity significantly. In this project, the Pd- and Ni-based contact system will be investigated since ternary compounds such as Pd4.8InP and Ni2.7InP have been observed between Pd, Ni and InP at low temperatures. Overlayers of Ge, Si, In or Sb will be investigated to drive the decomposition of the Pd (or Ni) ternary compounds and the epitaxial regrowth of Inp. The effects of a thin layer of embedded acceptor element on the electrical characteristics (i.e. Mn, Mg, or Zn) will be carried out. In this research cross-sectional transmission electron microscopy and backside secondary ion mass spectrometry will be used for structural investigation, and Transmission Line Model measurements will be utilized for electrical measurement. The SPR contacts are expected to provide more uniform interfaces and lower contact resistivity compared to.

这一建议的目的是针对形成非尖峰欧姆接触p型InP。本文提出了应用固相再生（SPR）原理制备p-InP触点的方法。用SPR法在n型和p型砷化镓上获得了接触电阻率在107n- cm2左右的浅接触（反应深度100a）。再生过程始于金属M（例如Pd或Ni）与化合物半导体衬底AB之间的低温反应，产生中间三元MxABy相。随后在较高的温度下，在Si、Ge或In的覆盖层与中间相之间发生反应，导致中间相的分解和与覆盖层元素掺杂或合金化的化合物半导体层的外延再生。中间三元MxABy相的非化学计量性（即y不等于1）将允许掺杂元素占据优先位点（位点选择机制），从而形成高掺杂的表面再生层。在金属M中嵌入一层薄薄的掺杂元素（即Mg、Mn、Si或Ge），成功地有意地掺杂在再生层上，显著降低了接触电阻率。由于在低温下Pd、Ni和InP之间已观察到Pd4.8InP和Ni2.7InP等三元化合物，因此本项目将研究Pd和Ni基接触体系。将研究Ge、Si、In或Sb覆盖层对Pd（或Ni）三元化合物分解和Inp外延再生的驱动作用。将进行薄层嵌入受体元件对电特性（即Mn， Mg或Zn）的影响。在本研究中，截面透射电子显微镜和背面二次离子质谱法将用于结构研究，传输线模型测量将用于电气测量。SPR触点有望提供更均匀的界面和更低的接触电阻率。