Electron-Localized Phonon Interactions in GaAs/AlxGa1-xAs Quantum Well Structures

局域光声子模式预计会出现在砷化镓（铝）量子阱结构中，由于它们与载流电子的强相互作用，将是重要的。他们建议研究它们独特的动力学特性。长期目标是研究界面粗糙度和动态电子筛选的影响，以及探索非平衡声子分布的可能产生。这项研究将对新型电子设备的设计产生直接影响，这种新型电子设备已经在半导体激光器和光通信领域彻底改变了微电子技术。

Localized optical-phonon modes are expected to occur in gallium (aluminum) arsenide quantum-well structures and would be important due their strong interaction with current-carrying electrons. They propose to examine their unique dynamical properties. Long-term objectives are to study the effects of interface roughness and dynamic electron screening as well as to explore the possible generation of non-equilibrium phonon distributions. % % % This research will have a direct impact on the design of new electronic devices of a type that are already revolutionizing microelectronics technology in the areas of semiconductor lasers and optical communications.