Electron-Localized Phonon Interactions in GaAs/AlxGa1-xAs Quantum Well Structures

GaAs/AlxGa1-xAs 量子阱结构中的电子局域声子相互作用

• 批准号: 9208381
• 负责人: Stephen Teitsworth
• 金额: $ 27万
• 依托单位: Duke University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-08-15 至 1997-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9208381&HistoricalAwards=false
• 关键词: Electron; Localized; Phonon; Interactions; GaAs

Localized optical-phonon modes are expected to occur in gallium (aluminum) arsenide quantum-well structures and would be important due their strong interaction with current-carrying electrons. They propose to examine their unique dynamical properties. Long-term objectives are to study the effects of interface roughness and dynamic electron screening as well as to explore the possible generation of non-equilibrium phonon distributions. % % % This research will have a direct impact on the design of new electronic devices of a type that are already revolutionizing microelectronics technology in the areas of semiconductor lasers and optical communications.

局域光学声子模式预计将出现在镓 （铝）砷化物量子阱结构，将是重要的 由于它们与载流电子的强相互作用。 他们 研究其独特的动力学性质。 长期 目的是研究界面粗糙度和 动态电子屏蔽以及探索可能的 非平衡声子分布的产生。 % % % 这项研究将对新的设计产生直接的影响 电子设备的类型已经是革命性的 半导体激光器领域的微电子技术 和光通信。